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13th Showa period 1 o'clock 1 patent office commissioner Benji Take ^ 1, name of the invention
electro-acoustic transducer device Biso · Ht 4 H * address Shinjuku 1 Shinjuku Nishi-ku 1-chome
'8-1 (new residence building) ■ Japan Patent Office Open Patent Publication ■ JP-A 48-61127.
". Request for examination not yet claimed (all 5 pages) Description title of the invention
electroacoustic transducer and method of manufacturing the same title of electroacoustic
transducer and the method of manufacturing the same
5, agent-160
Detailed Description of the Invention In an electric sound Ql conversion apparatus using a
capacitor such as a condenser microphone, condenser sneaker, condenser pick amplifier, etc., a
pair of electrode plates constituting a capacitor (one electrode plate becomes a diaphragm) Stone
spacers are provided to define the spacing to a predetermined value. Such a spacer is
conventionally formed by molding resin, rubber or other film into a ring shape by pressing or
other methods, and is interposed between the electrodes of the pair when assembling an
electroacoustic transducer such as a condenser microphone. . For this reason, it was difficult to
make the spacer extremely thin for handling. Also, with such a spacer, it is extremely difficult to
realize a spacer having nine island-like portions independent of one another. In view of such a
point, the present invention proposes a high-performance electro-acoustic transducer which can
make the distance between the pair of electrode plates sufficiently small, or form a spacer having
island-like portions independent of each other. It is a thing. Furthermore, the present invention
proposes EndPage: 1 to propose a manufacturing method capable of easily obtaining such an
electric sound III converter. An example of the application of the invention to an electret
condenser microphone will now be described in detail with reference to the drawings, with
reference to the method of manufacture and the like. FIG. 1 is a cross-sectional view of an
electret condenser microphone to which the present invention is applied. In FIG. 1 (11 is an
insulating substrate made of, for example, a synthetic resin, which is cylindrical in this example).
(2) is an annular recessed hole formed at one end (1g) @ of one end of the cylindrical substrate
(1). (1b) shows the other end face of the insulating base (1). Reference numerals 131, (4) and (5)
denote leads which are shielded at the end face (lb) @ of the insulating base (1). Among the leads
(3), (4), (5), the end face of the lead (4) is an end face of the insulating base (1) to make electrical
contact with the first fjlii plate (8) described later. (1a) is exposed flush. (6) is a semiconductor
bellet formed of a field effect transistor as an impedance converter, mounted inside the insulating
substrate (1) on the lead (3) and having its electrode connected to the other side (4), It is
connected to (5) via connection line (6m), (6b). The leads (3), (41, 51) are integrally molded with
the semiconductor bellet (6) on which the field effect transistor is formed. An electrode plate
(back electrode) made of, for example, aluminum deposited on an end face (1a) of the insulating
base (1) (in the illustrated example, inside the annular recess (2) @) It is.
(91 is a second electrode plate made of, for example, aluminum serving as a mobile plate, and is
formed on a ヱ relectretized film, for example, a polymer resin film (for example, 840 g is also
acceptable) (la is deposited on one surface The film 01 negative formed on this second electrode
plate (9) forms an imaging plate (diaphragm-diaphragm 7) integrally with the electrode plate (9)
of '2 y 2 from the photosensitive resin. Of the electrode plate of the film member's fan 2 (the
surface on which the surface 91 of the film is to be deposited is in contact with the spacer 121)
of the end face (, 1a) of the insulating substrate 1, ie,> 1. The opposite power distribution is made
to the electrode plate f81. The spacer ti3 is interposed between the electrode plates (8) and (21)
of the arms 21 and 2 partially (in this example, substantially annularly corresponding to the
peripheral portion of the second electrode plate +91). Incidentally, this spacer O3 defines the
distance between the first and second electrode plates (8) and (91), but it is essential for the
electrode plates (8) and 191 of the first and second electrodes. Nor does it need to be in direct
contact. Now, with reference to FIG. 33B, the first and second electrode plates (81, 193, film and
spacer 02) are formed on the insulating substrate (1). Explain how to As shown in FIG. 22, a
predetermined electrode plate (8) is deposited on a predetermined portion of the end face (la) of
the insulating substrate (1) by vapor deposition of, for example, aluminum. Next, as shown in FIG.
2B, on the end face (1a) of the insulating substrate (1), the 21 electrode plates (81 and other
parts as a whole are covered, for example, KPR etc. A photosensitive resin (in this example, a
negative type) is applied to a desired thickness to form a photosensitive resin layer (12 layers).
Next, as shown in FIG. 2C, the photosensitive resin layer (12 is exposed) through the optical mask
r19. (15a) is a light transmitting portion of the optical mask 09. In the case where the
photosensitive resin # (12 ') is a photocurable resin 1 m (negative type), the photosensitive resin
layer (exposed nine parts (12'a) of 12' is a cured part. Here, (12'b) is an uncured portion of the
photosensitive resin layer (12 '). Next, as shown in FIG. 5F2, the polymer film 01 with the
electrode plate (9) of the pole 2 formed on the upper surface (for example, by evaporation of
aluminum) is exposed to the photosensitive resin 1i! (It is stuck so as to be in close contact with
12 pieces. In this case, after the polymer film 01 is pasted on the photosensitive resin II (12 '), a
second electrode plate (91 may be bond-formed thereon).
Next, as shown in FIG. E, the photosensitive resin layer (12 ′) is subjected to the current
increase treatment to remove the uncured portion (12′b), and the cured portion (12 ′ ′ a) It
forms. The shape of the spacer +121 is shown in a perspective view in FIG. The spacer a21 has a
substantially annular shape as a whole, and an uncured portion (a solution which dissolves the
uncured portion (12'b) of the photosensitive resin layer (12 ')) present solution at the present
treatment 12'b) A notch (12A) is provided to allow the IC to penetrate and leak the unhardened
portion (12'b) of the solution. Therefore, the exposure process of the photosensitive resin 11i (12
') is performed so that the shape of the hard EndPage: binarized portion (12'a) of the
photosensitive resin layer (12') becomes as shown in FIG. Next, referring back to FIG. 21 and
second electrode plates (8) as shown in FIG. 9+, the insulating substrate (11 formed with the
spacer 01 and the film a1) is accommodated in a case ('151. The case 03 also serves as a shield
case, and is a metal case such as an aluminum lilla stand, and has a cylindrical cap shape
corresponding to the cylindrical shape of the insulating base 1. (15a) fl In the -L face plate of the
case a9, a hole (15b) into which sound intrudes is formed. The second electrode plate (9) and the
upper plate (IQ) of the case 09 are opened so that the second electrode plate 19) comes to the
upper plate (15a) side of the case 09. A metal ring ae is interposed and the insulating substrate
(1) is housed in the case (151). An extra # plate (a'gs film) is brought into contact with the end
face (1b) of the insulating substrate (1), and a metal plate (for shield) 0 &, for example, with
aluminum is brought into contact with it. The end 05c of the case aS is bent inward and crimped
on the metal plate. Incidentally, the leads (31, (4), (5) are exposed to the outside (without
contacting the metal plate 0) through the through holes respectively formed in the insulating
plate αη and the metal plate 0 & There is. Also, the crucible is attached to the metal plate OS by
soldering or the like, and the case (electrically lead out) is the next lead (for grounding). Thus, an
electret condenser microphone as shown in FIG. 11 is obtained. The spacer (13 is the front of the
photosensitive resin so that the space formed by the film .alpha..alpha., The insulating base (1),
the electrode plate (81 and the case fi 9 is one closed space). It is formed so that it has a notch
(12A) which is processed (melted) and melted and the burn-out is carried out to the outside in
the manufacturing plant, but the electrode plate (8) of 1 year and the film fil Or, to define the
distance in the center between the second electrode plate <9)>
+ A shape having an island in the center as shown in FIG. 24 or F1 5. FIG. 4 shows the case where
the spacer az is formed by an annular portion (12B) having three notches (12A), (12A) and (12)
and a central circle height (12C). 51'F5 shows an annular portion (12B) having four notches
(12A), (12A), (12A) and (12A) for the spacer fill and four island portions (12C) and (12C), This is
the case of (12C) and (12Q). In the above, the case where the device and manufacturing method
of the present invention are applied to an electret condenser microphone has been described, but
in a conventional condenser i which has no electret plate (sheet such as 11 m) 4 The present
invention can be applied. In that case, in the above-mentioned royalties shown in ff 2 and DK, an
electrode plate (91 may be a vapor deposited metal such as aluminum, or a metal plate) directly
on the exposed photosensitive resin II (12 ′). It may be applied and formed by pasting. The
device and method of the present invention can also be applied to an electroacoustic transducer
using a capacitor such as a capacitor speaker or a capacitor pickup. Also, the spacer (121
photosensitive resin is not limited to the negative type but also to the positive type. According to
the device of the present invention to be described above, since the spacer az defining the
distance between the first and the second electrode plates + 81. 191 is made of a photosensitive
resin, the thickness of the spacer α 2, that is, the first and the second electrodes It is possible to
reduce the distance between the plates (8) and 191 by a small amount (for example, 0.3 μ to
several 10 μ degrees), and as a result, the capacitance of the capacitor can be sufficiently
reduced, and this spacer (13 can be formed into a shape having an island-like portion, and as a
result, even if the area of ffl and the second electrodes (8) and (9) is large) It is possible to obtain
a high-performance (high-sensitivity) electroacoustic frame. Further, according to the
manufacturing method of the present invention described above, a photosensitive resin-(12 ") is
deposited on an electrode plate (8) of Ol, and this photosensitive resin # (12 is formed in a
predetermined pattern) This photosensitive resin layer (the second electrode plate (91t-depositformed, exposed and formed photosensitive resin layer (12 ') serving as a diaphragm on the
surface) is exposed and exposed. Since it is possible to intervene to form a spacer 2 made of a
photosensitive resin of a predetermined pattern which defines the distance between the cathode
and the cathode 51 'and the second electrode plate (81) and 191'. It becomes reliable and easy to
make the two electrode plates (91 face the first electrode plate (81 at a predetermined interval in
Also, the shape of the EndPage: 3 spacer 112 may be arbitrarily selected, and the thickness
thereof may be arbitrarily selected.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a cross-sectional view showing an example of
the device of the present invention, FIG. 2 is a royal right view showing the main part of an
example of the manufacturing method of the present invention, 3 years FIG. 51 is a perspective
view showing a portion, FIG. 51-4 and FIG. 5 @ each is a perspective view showing another
example of the spacer. (8) is a 21 electrode plate, (9I is a 2 year electrode plate, and a port 2 is a
spacer. Patent applicant Sony Corporation Representative 9 Fujishima Fig. 1 Fig. 2 Fig. 3 X 4 Fig.
5 EndPage: 46, Inventors other than the above, patent applicant or agent Address (whereabouts)
Name address Address (whereabouts) Name (2) Patent applicant address (location) address
(location) (3) agent EndPage: 5