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■ Semiconductor Machinery-Electrical Conversion Element Application for Application 4553911 [Phase] Application for Application 45 (1970) June 19 @ Inventor Watanabe MakotoAtsugi City Necessity 2301 Applicant for Sony Corporation Tokyo Part for Kita Parts Kita article
Forty-seven 35 [phase] agent patent attorney Atsushi Ito for 6
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an example of
the semiconductor mechanical-electrical conversion element of the present invention, FIG. 2 is a
perspective view showing an example of an apparatus for applying stress to the element shown
in FIG. FIG. 4 is a sectional view showing another example of the present invention, and FIG. 4 is
a perspective view showing an application example of the element of the present invention.
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to highly sensitive
semiconductor electromechanical transducers. Compound semiconductors such as nb-vxb group
compounds such as CdS% CdSe% ZnO, ZnS, CdTe, etc. and mb-vb group compounds such as GaAs,
GaSb, InAs, InSb, etc. are known as semiconductors having remarkable piezoelectric effects. ing.
The nb- & bgr; b group compounds have a wurtz expanded crystal structure and a zinc-zinc
crystal structure, and the IIIb-Vb group compounds have a zinc-blende crystal structure except
for AIN. The electric displacement (electric flux density) Dl in the x, y, z directions D1, D2. The
relationship between D and warp stress T1 + T2tT3tXty in the X, y and z directions, in-plane slip
stress T and T6 respectively perpendicular to the Z axis is that of the Wurtz expanded crystal
structure, assuming that the piezoelectric constant is e. In this case, [111111] is obtained, and in
the case of zinc blende crystal structure, The present invention forms a PN junction in a
compound semiconductor having such a piezoelectric effect and applies stress to the chemical
semiconductor so that charges are generated by the piezoelectric effect on both sides of the
depletion layer of the PN junction. A semiconductor mechanical-electrical conversion element is
configured to change the expansion of the depletion layer due to stress. The invention will now
be described by way of example with reference to the drawings. The first embodiment is a
capacitive element to which the present invention is applied. In FIG. 1, reference numeral 1
denotes a capacitive element, which is a diode structure including a P shadow area 1a and an N
shadow area 1b, and 1c is its PN junction. The material of this element is, for example, GaAs.
Reference numerals 2a and 2b denote electrodes formed at the free ends of the P-type region 1a
and the N-type region 1b, respectively. In this example, they are disposed substantially parallel to
the PN junction 1c. Denoted at 4 is a depletion layer near the PN junction 11c. Assuming that the
capacitance of the capacitor formed of the depletion layer 4 is C1, the voltage across the
capacitor is V, and the charge stored in the capacitor is Q, C-9 ................. (3) ■ The relationship 75
rises. Also, if the PN junction 11c is stepped, let k be a proportional constant between the
capacitance C and the voltage V across the end (, 1-kV '.... The relationship of (4) holds. [111111]
EndPage: In the case where GaAs is used as the material of such a diode 1, this GaAs has a zincblende crystal structure, so from the above equation (2), the plane of the PN junction 1c When T
is applied to this diode 1 in the direction slip stress, charges ΔQ are generated on both sides in
the thickness direction of depletion layer 4, and the spread of depletion layer 4 changes.
Therefore, in this case, from the equations (3) and (4), the capacitance C changes by ΔC-1, 2Q2ΔQ (5). FIG. 2 shows a device for applying the above-mentioned sliding stress to the diode 1.
The fixed portion 5 has a square pole diode 1 mounted on the yzz plane 5a so that its PN
junction 1c is in the xy plane. . In order to hold the diode 1 in cooperation with the fixing portion
5, the yz screen 6 a of the operation plate 6 is attached to the diode 1. If a force is applied to the
operation plate 6 in the y direction as indicated by the arrow 7, a slip stress in the direction of
the junction 11c of the diode 1, ie, the xy plane direction is given, and the capacitance of the
capacitor is changed as described above. Such a capacitive element can be used, for example, as a
variable capacitance element of a tuner. Next, the second embodiment of the present invention is
an example in which the present invention is applied to a junction type field effect transistor
(hereinafter abbreviated as junction type FET). In FIG. 3, 11 shows a junction type FET as a
whole, for example, made of GaAs. For example, 11a is a P-type gate region, 11b is an N-type
channel region in which an N-channel is formed, and a source electrode 12 and a drain electrode
13 are respectively formed in this channel region 11b. 11c is a PN junction (having a main plane
(11c ')). When a slip stress in the direction of the main plane 110 'of the PN junction 11c of the
junction type FET I1 is an insulating layer formed on the surface of the element, the PN junction
11c is subjected to a slip stress. In response to this stress, a charge corresponding to this stress is
generated, the thickness of the depletion layer 14 changes in response to this stress, and the
conductivity of the channel 15 between the source and drain is changed. In this case, a gate
electrode may be provided in the gate region 11a to apply a gate potential. Although junction
FETs come in various forms, junction FETs to which the present invention is applied may also
adopt various forms. Such a semiconductor mechanical-electrical conversion device according to
the present invention can be used in various applications, but the case where it is applied to a
pick-up cartridge of a record player as an example will be described next with reference to FIG. In
FIG. 4, reference numeral 17 denotes a cartridge, and reference numeral 18 denotes a crosssectional support on which the above-mentioned capacitive element 1 or junction type FET 11 is
fixedly attached. Further, at the free end of the flat plate 18b of the support stand 18, a
substantially Y-shaped fulcrum post 19 is planted. The substantially U-shaped operating piece 20
is attached to the other end of the capacitive element 1 or the junction type FET 11.
An arm 21 is held at its middle portion between the two branches 19a and 19b of the fulcrum
pillar 19 and can be slightly pivoted about a portion held by the fulcrum pillar 19 as a fulcrum.
One end of the arm 21 is held by the two legs 20a and 20b of the operating piece 20, the other
end is bent downward twice, and the needle 22 is attached to the lower surface thereof. In this
case, in this case, the arm 21 vibrates in a direction substantially orthogonal to the fulcrum
column 19 in accordance with the lateral vibration as shown by the arrow 23 of the needle 22
and slips in the plane direction of the PN junction of the diode 1 or the junction type FET 11 A
second diode 1 or a junction FET 11 is attached to the support 18 and the operation piece 20 so
as to be stressed. According to such a pickup 1, an electric signal can be obtained from the anode
and the diode of the diode 1 or the source and the drain of the junction type FET 11 according to
the trace of the sound groove of the record board of the needle 22. According to the present
invention described above, a PN junction is formed in a compound semiconductor having a
piezoelectric effect, and stress is applied to the compound semiconductor so that charges are
generated on both sides of the depletion layer of the PN junction due to the piezoelectric effect.
This stress effect is a primary effect, and the sensitivity is increased, and charge generation
occurs even if stress is uniformly applied to the entire semiconductor. Is confined to both ends of
the depletion layer of the PN junction, so that it is not necessary to apply stress locally, so the
mechanical durability of the semiconductor becomes large and the reliability becomes large. In
the above, the case of GaAs has been described as the material of the semiconductor mechanicalelectric conversion element, but it is not limited thereto and chemical semiconductor such as mbvib, mb-vb group compound etc. mentioned at the beginning It is sufficient if the piezoelectric
effect is 11111111EndPage: 2. Also, how to apply stress or slip stress and warp stress to the
semiconductor electromechanical transducer may be added so that charges are generated on
both sides of the depletion layer of the PN junction, and the husband is the first, the first It is
determined by the basic piezoelectric equation according to the crystal structure such as
equation 2. In the case of a compound semiconductor of zinc blende type crystal structure,
according to the slip stress in the 110 plane, it responds to the hot stress in the 111 plane. In
compound semiconductors with wurtzite iron crystal structure, if there is a PN junction in a
plane perpendicular to the C axis, in-plane slip stress in a plane perpendicular to the C axis or
electricity parallel to the C axis with respect to electrical Generate a change.