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BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1a and 1b are a perspective view and a sectional
view of a loudspeaker, FIG. 2 is a diagram showing its directivity characteristic, FIG. 3 is its
frequency characteristic diagram, and FIG. FIG. 5 is a diagram showing directivity characteristics
of the loudspeaker according to one embodiment, and FIG.
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a loudspeaker
apparatus such as a transistor, a megaphone and a horn speaker, and its object is to improve the
characteristics. The conventional shoulder type transistor-megaphone generally has one opening,
but its characteristics are divided into two or more i3a, 3b near the opening of the horn speaker
4 as shown in FIG. Thus, the radiation directions of the respective openings can be made
different to be as omnidirectional as possible. ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・
・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ (2 /-口 5a, sb, 5ci Lh-7, 8a, 6bH It shows
the direction of radiation. By the way, when radiation is performed in two directions in the back
and forth or near state due to such a configuration, as shown in the directivity pattern
characteristic example of FIG. On the other hand, in the low range, the sound pressure level near
the side (9d) direction becomes higher than the front direction of the front and rear opening
surfaces as will be described later. Therefore, well-balanced reproduction from low to high is
possible at the front, but the sound pressure level difference between low and high in the vicinity
of the side is large and the reproduction becomes unbalanced as the frequency characteristic,
and the service area in this direction However, the sound quality is degraded. This is because in
the side direction the sound waves radiated from each of the phone opening surfaces are almost
in-phase, so the combined sound pressure level rises, but in the front, the frequency at which X
between the aperture surface distances λ of each horn becomes- Since the sound waves emitted
in the vicinity of 550 c) become approximately 30 cfl + and the phases of the sound waves
emitted are opposite to each other, and the sound 1-to-t) emitted from the respective horns
before and after) It is almost equal because the directivity is close to 3 -1. Therefore, near the
frequency, the sound wave is canceled and the sound pressure level is lowered. An example of
the frequency characteristic when such a phenomenon occurs is shown in FIG. In this case, the
output sound pressure is considerably reduced at around 550 Hz5. In addition, as the frequency
deviates from the front and becomes closer to the side, the frequency becomes higher, and since
directivity at a high frequency is to some extent, a sound pressure level difference is generated,
and the rate of decrease due to cancellation of each emitted sound decreases. 1- To prevent the
above-mentioned drawbacks, the distance X between the opening faces 3a and 3b of the
respective horns shown in FIG. Conceivable. The former is structurally impossible. The present
invention eliminates the aforementioned drawbacks by the latter method.
That is, it is possible to set the frequency to be canal out of the regeneration band by configuring
the frequency which becomes-of the interval λ surface distance of the opening of each horn to
be near or below fc of each horn. Therefore, the directivity pattern in FIG. "Sex. Like, ヮ, 高 域, 、,
no fat. sex. You can get a 2 ° turn. In addition, since well-balanced reproduction is performed as
shown in the face frequency characteristic example of FIG. 5, it is possible to prevent poor sound
quality in the side direction, and it is possible to obtain a shoulder type transistor megaphone
with a wide service area. On the contrary, when each horn opening surface distance X is
determined according to the specification etc., it is possible to set fc を of the horn to be a
frequency which becomes-of the distance X or more. It is the same as the main point. Further, in
the above embodiment, the present invention is applicable to a horn speaker for general address
and address, although the present invention is limited to the shoulder type transistor megaphone.
As apparent from the above description, according to the present invention, a loudspeaker
having good directional characteristics can be obtained. It is a major part of practical effects.
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