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JP2018085636

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DESCRIPTION JP2018085636
Abstract: The present invention provides a mounting structure, an ultrasonic device, an ultrasonic
probe, an ultrasonic device, and an electronic apparatus capable of increasing the aspect ratio of
resin protrusions on which wiring is formed. An ultrasonic device (22) includes an element
substrate (41), a sealing plate (42) corresponding to the substrate, an acoustic layer (43), and a
protective film (44). The sealing plate 42 is provided with a groove portion 421, a conductive
portion 5, a through electrode 424, and a lower electrode wiring 425. The mounting structure is
configured to include the semiconductor substrate 420A and the insulating layer 420B in which
the groove portion 421 is provided, and the conductive portion 5. [Selected figure] Figure 3
Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic device, and electronic device
[0001]
The present invention relates to a mounting structure, an ultrasonic device, an ultrasonic probe,
an ultrasonic device, and an electronic device.
[0002]
In the case of mounting an electronic component on a circuit board, there is known a mounting
method in which a wiring on the circuit board side and a wiring on the electronic component side
are electrically connected via a bump electrode (see, for example, Patent Document 1).
[0003]
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1
In Patent Document 1, an electronic component is configured by providing an electronic element
(functional element) such as an IC chip and a bump electrode connected to the functional
element on a substrate.
Among these, the bump electrode includes a wire connected to the electrode pad drawn from the
functional element, and an elastically deformable resin protrusion.
The conductive film is drawn from the functional element to the resin protrusion formed on the
peripheral portion of the substrate, straddles the resin protrusion, and covers a part of the
surface of the resin protrusion. On the other hand, the circuit substrate is a substrate on which a
liquid crystal panel is formed, and electrode terminals are formed outside the region where the
liquid crystal element is disposed. The bump electrode and the electrode terminal are electrically
connected by bringing the bump electrode on the electronic component side into contact with
the electrode terminal on the circuit board side and causing elastic deformation.
[0004]
JP 2007-180166 A
[0005]
By the way, a resin projection as described in patent document 1 is formed in a substantially
hemispherical shape, for example, by heating and melting a resin material provided on a
substrate and then solidifying the resin material.
That is, the resin protrusions are formed so as to gradually rise from the substrate surface
toward the center in a plan view as viewed from the substrate thickness direction. Therefore,
when the wiring is formed from the substrate surface to the resin protrusion, the wiring can be
easily formed at the boundary between the resin protrusion and the substrate, for example, as
compared to a resin protrusion having a side surface substantially orthogonal to the substrate
surface, Wiring formation defects can be suppressed.
[0006]
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2
However, in the case of heating and melting the resin material as described above, if the height
(dimension in the thickness direction) of the resin protrusion is increased, the planar dimension
(dimension in the direction parallel to the substrate surface) of the resin protrusion also
increases. For this reason, there has been a problem that it is difficult to increase the aspect ratio
(the ratio of the height dimension to the planar dimension) of the resin protrusion. In addition,
since the aspect ratio can not be increased, it has not been easy to achieve high integration of
resin protrusions and consequently high integration of wiring.
[0007]
An object of the present invention is to provide a mounting structure, an ultrasonic device, an
ultrasonic probe, an ultrasonic device, and an electronic device capable of increasing the aspect
ratio of resin protrusions in which wiring is formed.
[0008]
A mounting structure according to an application example of the present invention includes a
substrate, a groove formed on one surface of the substrate, a resin protrusion provided on the
groove, and a wire provided from the substrate to the resin protrusion. And the like.
[0009]
In the application example, the resin protrusion is provided in the groove portion formed in the
substrate.
In such a configuration, for example, the aspect ratio of the resin protrusions can be increased as
compared with the configuration in which the resin protrusions are provided on the flat surface
of the substrate.
That is, as described above, when the resin protrusions are formed by heating, melting, and
solidifying the resin protrusions on the flat surface of the substrate, the resin protrusions expand
along the flat surface, and become, for example, substantially hemispherical. On the other hand,
by providing the resin protrusion in the groove portion, the heat-melted resin material can be
prevented from spreading in the planar direction, and the aspect ratio of the resin protrusion can
be increased. In addition, the planar shape of the resin protrusion in a plan view can be made a
shape according to the shape of the groove. Therefore, it is easy to form a resin projection having
a desired planar dimension and height dimension in a desired region, and consequently, high
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integration of the resin projection and the wiring can be achieved.
[0010]
In the mounting structure of this application example, it is preferable that the groove portion is
opened at the one surface of the substrate and has an opening edge which forms the opening,
and the resin protrusion is in contact with the opening edge. In this application example, no gap
is formed between the resin protrusion and the substrate at the opening edge which is the
boundary position between the resin protrusion and the substrate. Therefore, when the wiring is
formed from the substrate to the resin protrusion, the formation failure of the wiring due to the
gap does not occur, and the wiring can be appropriately formed at the boundary position.
[0011]
In the mounting structure of the application example, the groove inner surface of the groove
preferably curves in a concave shape. In this application example, the resin protrusion can be
held by the inner surface of the concavely curved groove. For example, when the resin material is
heated and melted to form the resin projection, the molten resin material can be stably held in
the groove.
[0012]
In the mounting structure according to the application example, it is preferable that the
mounting structure includes a wall that surrounds the groove and the resin protrusion in a plan
view as viewed from the thickness direction of the substrate. In the application example, the resin
protrusion is provided in the recess formed on the one surface side of the substrate by the
groove portion and the wall portion. In such a configuration, the wall portion can more reliably
suppress the molten resin material from spreading along one surface of the substrate. For
example, the height of the resin protrusion can be increased by increasing the volume of the
resin material. However, in the configuration in which the wall portion is not formed, when the
volume of the resin material exceeds the tolerance with respect to the volume of the groove
portion, the molten resin material may expand to the outside of the groove portion. On the other
hand, by providing the wall portion, the resin protrusion can be provided in the recess having a
volume larger than that of the groove portion, and the spread of the resin material can be
suppressed more reliably. Also, the volume tolerance of the resin material can be increased, and
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the height of the resin material can be further increased.
[0013]
In the mounting structure according to the application example, it is preferable that the wall
portion has a top surface on the opposite side to the substrate in the thickness direction, and the
resin protrusion is in contact with the inner peripheral edge of the top surface. In the application
example, no gap is formed between the resin protrusion and the wall at the inner peripheral edge
which is the boundary position between the resin protrusion and the wall. Therefore, when
forming the wiring from the substrate to the resin protrusion so as to straddle the wall portion,
the formation failure of the wiring due to the gap does not occur, and the wiring can be
appropriately formed at the boundary position.
[0014]
In the mounting structure according to this application example, preferably, the wall portion has
an inner side surface on the groove portion side in a plan view of the thickness direction of the
substrate, and the inner side surface is curved in a concave shape. In this application example,
the resin protrusion is held by the inner surface of the concavely curved wall. Therefore, for
example, when the resin material is heated and melted to form the resin projection, the molten
resin material can be stably held in the groove.
[0015]
In the mounting structure according to this application example, the wall portion has a top
surface on the side opposite to the substrate in the thickness direction, and an outer surface
opposite to the groove portion in the plan view, and the outer surface It is preferable that the
semiconductor device has an inclined portion which is inclined toward the outside in the plan
view as it goes from the top surface to the substrate and in which the wiring is formed. In this
application example, the top surface of the wall and one surface of the substrate are connected
by the inclined portion of the outer surface, and the dimension in the thickness direction of the
wall gradually decreases toward the outside in the planar direction. Therefore, when forming the
wiring from the one surface to the top surface of the wall portion, it can be avoided that the
wiring is formed so as to straddle the step in the thickness direction, and the wiring can be
formed more appropriately.
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[0016]
In the mounting structure according to the application example, the wiring includes an
underlying wiring which is provided from the groove portion side of the wall portion to the
opposite side to the groove portion and covers at least a part of the wall portion in the plan view
Preferably, the base wiring is provided at a position overlapping with the wall portion in the plan
view. In this application example, the base wiring is formed so as to cover at least a part of the
wall from the groove side to the opposite side, that is, from the inside to the outside of the wall.
The wiring is formed in the base wiring at a position overlapping the wall portion. In such a
configuration, the wiring formed from the groove portion to the substrate is formed on the base
wiring at the boundary position between the resin portion and the wall portion, and on the wall
portion at the boundary position between the wall portion and the substrate . Thereby, the
disconnection of the wiring can be suppressed at each boundary position or on the wall portion,
and the connection reliability can be improved.
[0017]
An ultrasonic device according to an application example of the present invention includes a
substrate, a groove portion formed on one surface of the substrate, a resin protrusion provided
on the groove portion, and a wire provided from the substrate to the resin protrusion. And an
ultrasonic transducer electrically connected to the wiring.
[0018]
In this application example, as in the piezoelectric device of the above application example, the
resin protrusion is provided in the groove portion formed in the substrate.
In such a configuration, for example, compared with the configuration in which the resin
protrusion is provided on the flat surface of the substrate, the groove portion can prevent the
heat-melted resin material from spreading in the planar direction, and increase the aspect ratio of
the resin protrusion. Can. In addition, the planar shape of the resin protrusion in a plan view can
be made a shape according to the shape of the groove. Therefore, it is easy to form a resin
projection having a desired planar dimension and height dimension in a desired region, and
consequently, high integration of the resin projection and the wiring can be achieved.
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[0019]
In an ultrasonic probe according to an application example of the present invention, a substrate,
a groove portion formed on one surface of the substrate, a resin protrusion provided on the
groove portion, and a wiring provided from the substrate to the resin protrusion And an
ultrasonic transducer electrically connected to the wiring, and a housing for housing the
ultrasonic device.
[0020]
In this application example, as in the piezoelectric device of the above application example, the
resin protrusion is provided in the groove portion formed in the substrate.
In such a configuration, for example, compared with the configuration in which the resin
protrusion is provided on the flat surface of the substrate, the groove portion can prevent the
heat-melted resin material from spreading in the planar direction, and increase the aspect ratio of
the resin protrusion. Can. In addition, the planar shape of the resin protrusion in a plan view can
be made a shape according to the shape of the groove. Therefore, it is easy to form a resin
projection having a desired planar dimension and height dimension in a desired region, and
consequently, high integration of the resin projection and the wiring can be achieved.
[0021]
An ultrasonic apparatus according to an application example of the present invention includes a
substrate, a groove formed on one surface of the substrate, a resin protrusion provided on the
groove, and a wire provided from the substrate to the resin protrusion. An ultrasonic transducer
electrically connected to the wiring, and a control unit for controlling the ultrasonic transducer
are provided.
[0022]
In this application example, as in the piezoelectric device of the above application example, the
resin protrusion is provided in the groove portion formed in the substrate.
In such a configuration, for example, compared with the configuration in which the resin
01-05-2019
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protrusion is provided on the flat surface of the substrate, the groove portion can prevent the
heat-melted resin material from spreading in the planar direction, and increase the aspect ratio of
the resin protrusion. Can. In addition, the planar shape of the resin protrusion in a plan view can
be made a shape according to the shape of the groove. Therefore, it is easy to form a resin
projection having a desired planar dimension and height dimension in a desired region, and
consequently, high integration of the resin projection and the wiring can be achieved.
[0023]
An electronic device according to an application example of the present invention includes a
substrate, a groove portion formed on one surface of the substrate, a resin protrusion provided in
the groove portion, a wiring provided from the substrate to the resin protrusion, and A functional
element electrically connected to the wiring, and a control unit that controls the functional
element are characterized.
[0024]
In this application example, as in the piezoelectric device of the above application example, the
resin protrusion is provided in the groove portion formed in the substrate.
In such a configuration, for example, compared with the configuration in which the resin
protrusion is provided on the flat surface of the substrate, the groove portion can prevent the
heat-melted resin material from spreading in the planar direction, and increase the aspect ratio of
the resin protrusion. Can. In addition, the planar shape of the resin protrusion in a plan view can
be made a shape according to the shape of the groove. Therefore, it is easy to form a resin
projection having a desired planar dimension and height dimension in a desired region, and
consequently, high integration of the resin projection and the wiring can be achieved.
[0025]
BRIEF DESCRIPTION OF THE DRAWINGS The perspective view which shows schematic structure
of the ultrasonic measuring device of 1st Embodiment. BRIEF DESCRIPTION OF THE DRAWINGS
The block diagram which shows schematic structure of the ultrasonic measuring device of 1st
Embodiment. BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing which shows schematic
structure of the ultrasonic device of 1st Embodiment. FIG. 2 is a plan view showing a schematic
configuration of an element substrate in the ultrasonic device of the first embodiment. FIG. 2 is a
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plan view showing a schematic configuration of a sealing plate in the ultrasonic device of the first
embodiment. Sectional drawing which shows schematic structure of the sealing plate in the
ultrasonic device of 1st Embodiment. FIG. 2 is a plan view showing a schematic configuration of a
sealing plate in the ultrasonic device of the first embodiment. Sectional drawing which shows
schematic structure of the sealing plate which concerns on a comparative example. Sectional
drawing which shows schematic structure of the sealing plate in the ultrasonic device of 2nd
Embodiment. The top view which shows schematic structure of the sealing plate in the ultrasonic
device of 2nd Embodiment. Sectional drawing which shows schematic structure of the sealing
plate in the ultrasonic device of 2nd Embodiment. The top view which shows schematic structure
of the sealing plate in the ultrasonic device of 2nd Embodiment. Sectional drawing which shows
schematic structure of the sealing plate which concerns on the modification 1. FIG. Sectional
drawing which shows schematic structure of the sealing plate which concerns on the
modification 2. FIG. FIG. 13 is a plan view showing a schematic configuration of a sealing plate
according to a third modification. FIG. 10 is a plan view showing a schematic configuration of a
sealing plate according to a modification 4; FIG. 18 is a plan view showing a schematic
configuration of a sealing plate according to a fifth modification. Sectional drawing which shows
schematic structure of the sealing plate which concerns on the modification 6. FIG.
[0026]
First Embodiment Hereinafter, an ultrasonic measurement apparatus according to a first
embodiment will be described based on the drawings. FIG. 1 is a perspective view showing a
schematic configuration of the ultrasonic measurement apparatus 1. FIG. 2 is a block diagram
showing a schematic configuration of the ultrasonic measurement apparatus 1. The ultrasonic
measurement device 1 corresponds to an ultrasonic device, and as shown in FIG. 1, includes an
ultrasonic probe 2 and a control device 10 electrically connected to the ultrasonic probe 2 via a
cable 3. . The ultrasonic measurement apparatus 1 brings an ultrasonic probe 2 into contact with
the surface of a living body (for example, a human body), and transmits ultrasonic waves from
the ultrasonic probe 2 into the living body. In addition, the ultrasound probe 2 receives the
ultrasonic wave reflected by the organ in the living body, and based on the received signal, for
example, acquires an internal tomographic image in the living body, the state of the organ in the
living body (for example, Measure blood flow etc.)
[0027]
[Configuration of Control Device] The control device 10 corresponds to a control unit, and
includes, for example, the operation unit 11, the display unit 12, the storage unit 13, and the
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calculation unit 14 as shown in FIG. Be done. The control device 10 may use, for example, a
terminal device such as a tablet terminal, a smartphone, or a personal computer, or may be a
dedicated terminal device for operating the ultrasound probe 2. The operation unit 11 is a UI
(user interface) for the user to operate the ultrasound measurement apparatus 1 and can be
configured by, for example, a touch panel provided on the display unit 12, an operation button, a
keyboard, a mouse or the like. The display unit 12 includes, for example, a liquid crystal display
and the like, and displays an image. The storage unit 13 stores various programs for controlling
the ultrasonic measurement device 1 and various data. The calculation unit 14 is configured of,
for example, a calculation circuit such as a CPU (Central Processing Unit) or a storage circuit
such as a memory. Then, the calculation unit 14 reads and executes various programs stored in
the storage unit 13 to control generation processing and output processing of a transmission
signal for causing the ultrasonic probe 2 to transmit an ultrasonic wave, and the ultrasonic probe
2 performs control of various processes (for example, frequency setting and gain setting of a
reception signal) for receiving an ultrasonic wave.
[0028]
[Configuration of Ultrasonic Probe] The ultrasonic probe 2 corresponds to an ultrasonic probe,
and a case 21, an ultrasonic device 22 housed inside the case 21, and a driver for controlling the
ultrasonic device 22. And a circuit board 23 (see FIG. 2) provided with a circuit and the like. In
addition, the ultrasonic sensor 24 is comprised by the ultrasonic device 22 and the circuit board
23, and the said ultrasonic sensor 24 comprises an ultrasonic module.
[0029]
[Configuration of Housing] As illustrated in FIG. 1, the housing 21 is formed in, for example, a
box shape having a rectangular shape in a plan view, and a sensor window 21B is provided on
one surface (sensor surface 21A) orthogonal to the thickness direction. And part of the
ultrasound device 22 is exposed. Further, a passage hole 21C of the cable 3 is provided in a part
of the case 21 (a side surface in the example shown in FIG. 1), and the cable 3 is connected to the
circuit board 23 inside the case 21 from the passage hole 21C. Ru. Further, the gap between the
cable 3 and the passage hole 21C is, for example, filled with a resin material or the like to ensure
waterproofness. In addition, in this embodiment, although the structural example to which the
ultrasonic probe 2 and the control apparatus 10 are connected using the cable 3 is shown, it is
not limited to this, For example, the ultrasonic probe 2 and the control apparatus 10 are wireless.
It may be connected by communication, and various configurations of the control device 10 may
be provided in the ultrasonic probe 2.
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[0030]
[Configuration of Circuit Board] The ultrasonic device 22 is bonded to the circuit board 23, and a
driver circuit or the like for controlling the ultrasonic device 22 is provided. As shown in FIG. 2,
the circuit board 23 includes a selection circuit 231, a transmission circuit 232, and a reception
circuit 233.
[0031]
The selection circuit 231 is a transmission connection for connecting the ultrasonic device 22
and the transmission circuit 232 under the control of the control device 10, and a connection
state for any of reception connections for connecting the ultrasonic device 22 and the reception
circuit 233. Switch to When the transmission circuit 232 is switched to the transmission
connection by the control of the control device 10, the transmission circuit 232 outputs a
transmission signal to the effect that the ultrasonic device 22 transmits an ultrasonic wave via
the selection circuit 231. The reception circuit 233 outputs the reception signal input from the
ultrasonic device 22 via the selection circuit 231 to the control device 10 when the reception
connection is switched to the reception connection under the control of the control device 10.
The reception circuit 233 includes, for example, a low noise amplification circuit, a voltage
control attenuator, a programmable gain amplifier, a low pass filter, an A / D converter, etc.,
converts the reception signal into a digital signal, removes noise components, After each signal
processing such as amplification to a signal level is performed, the processed reception signal is
output to the control device 10.
[0032]
[Configuration of Ultrasonic Device] FIG. 3 is a cross-sectional view of the ultrasonic device 22.
As shown in FIG. FIG. 4 is a plan view of the element substrate 41 in the ultrasonic device 22 as
viewed from the sealing plate 42 side. FIG. 5 is a plan view schematically showing the ultrasonic
transducer 45 viewed from the protective film 44 side. FIG. 3 is a cross-sectional view of the
ultrasonic device 22 taken along the line A-A in FIG. As shown in FIG. 3, the ultrasonic device 22
is configured to include an element substrate 41, a sealing plate 42 corresponding to the
substrate, an acoustic layer 43, and a protective film 44. Among them, the element substrate 41
and the sealing plate 42 are electrically connected via the conductive portion 5 of the sealing
01-05-2019
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plate 42 and the wiring portion 415 of the element substrate 41 as shown in FIG. Here, in the
following description, the surface of the element substrate 41 facing the sealing plate 42 is
referred to as a back surface 41A, and the surface on the opposite side to the back surface 41A is
referred to as an operation surface 41B. The surface of the sealing plate 42 facing the element
substrate 41 is referred to as an inner surface 42A, and the surface opposite to the inner surface
42A is referred to as an outer surface 42B. The thickness direction of the element substrate 41
and the sealing plate 42 substantially coincides with the Z direction.
[0033]
(Structure of Element Substrate) The element substrate 41 includes, as shown in FIG. 3, a
substrate body 411 and a vibrating film 412 stacked on the substrate body 411. Further, as
shown in FIG. 4, the element substrate 41 is joined to the piezoelectric element 413, the lower
electrode connection line 414, the wiring portion 415, and the upper electrode lead line 416 on
the sealing plate 42 side of the vibrating film 412. A part 417 is provided. Among them, an
ultrasonic transducer 45 configured to transmit and receive an ultrasonic wave is configured by
the flexible portion 412A which is a vibration area of the vibrating film 412 and the piezoelectric
element 413. As shown in FIG. 4, in the array area Ar1 located at the center of the element
substrate 41, a plurality of ultrasonic transducers 45 for transmitting and receiving ultrasonic
waves intersect in the X direction and the X direction (in the embodiment, orthogonally). They
are arranged in a matrix along the Y direction. An ultrasonic array UA is configured by the
plurality of ultrasonic transducers 45.
[0034]
The substrate main body 411 is, for example, a semiconductor substrate such as Si. In the array
area Ar1 of the substrate body 411, an opening 411A corresponding to each ultrasonic
transducer 45 is provided. Each opening 411A is separated by a partition 411B. Each opening
411A is closed by a vibrating film 412 provided on the sealing plate 42 side (−Z side).
[0035]
The vibrating film 412 is made of, for example, SiO 2 or a laminate of SiO 2 and ZrO 2, and is
provided to cover the entire −Z side of the substrate body 411. Of the vibrating membrane 412,
a portion closing the opening 411A constitutes an elastically deformable flexible portion 412A.
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The thickness dimension (thickness) of the vibration film 412 is a sufficiently small thickness
dimension (thickness) with respect to the substrate body 411. When the substrate body 411 is
made of Si and the diaphragm 412 is made of SiO 2, for example, the substrate body 411 is
oxidized to easily form the diaphragm 412 having a desired thickness (thickness). Is possible.
Further, in this case, the opening 411A can be easily formed by etching the substrate body 411
using the SiO2 vibrating film 412 as an etching stopper.
[0036]
In addition, piezoelectric elements 413 are provided on the flexible portions 412A of the
vibrating film 412 closing the openings 411A. One flexible ultrasonic transducer 45 is
configured by the flexible portion 412A and the piezoelectric element 413. The piezoelectric
element 413 is configured as a laminate of the lower electrode 413A, the piezoelectric film 413B,
and the upper electrode 413C.
[0037]
The lower electrode 413A and the upper electrode 413C are configured to include a layer of one
or more conductive materials. As such a conductive material, for example, an electrode material
such as Au, Al, Cu, Ir, Pt, IrOx, Ti, TiW, TiOx can be used. In the present embodiment, for example,
the lower electrode 413A is configured by sequentially laminating a TiW layer (50 nm) and a Cu
layer (100 nm) on the vibrating film 412. Further, the piezoelectric film 413B is formed using,
for example, a transition metal oxide having a perovskite structure, more specifically, lead
zirconate titanate containing Pb, Ti and Zr.
[0038]
In such an ultrasonic transducer 45, by applying a rectangular wave voltage of a predetermined
frequency between the lower electrode 413A and the upper electrode 413C, the flexible portion
412A located in the opening region of the opening 411A is oriented in the Z direction. It can be
vibrated along and ultrasonic waves can be transmitted. Further, when the flexible portion 412A
is vibrated by the ultrasonic wave reflected from the object, a potential difference is generated
above and below the piezoelectric film 413B. Therefore, by detecting the potential difference
generated between the lower electrode 413A and the upper electrode 413C, it is possible to
detect the received ultrasonic waves.
01-05-2019
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[0039]
Further, in the present embodiment, as shown in FIG. 4, among the plurality of ultrasonic
transducers 45 arranged along the X direction and the Y direction, the two ultrasonic
transducers 45 aligned in the Y direction are one An ultrasonic transducer group 45A which is a
transmission / reception channel is configured. That is, in the ultrasound array UA, a plurality of
ultrasound transducer groups 45A which are transmission and reception channels are arranged
along the X direction and the Y direction, and configured as a two-dimensional array.
[0040]
The lower electrodes 413 A of the ultrasonic transducers 45 constituting the ultrasonic
transducer group 45 A are connected by a lower electrode connecting line 414. The lower
electrode connection line 414 is integrally formed with each lower electrode 413A. That is, the
lower electrode connecting line 414 is configured, for example, by laminating a TiW layer (50
nm) and a Cu layer (100 nm), similarly to the lower electrode 413A. The lower electrode
connection line 414 may be provided separately from the lower electrode 413A.
[0041]
The upper electrode lead wire 416 is connected to each upper electrode 413 C of the ultrasonic
transducer 45. The upper electrode lead wire 416 is formed of a conductive material, and
includes a plurality of lead wire portions 416A, a connecting portion 416B for connecting the
lead wire portion 416A and the upper electrode 413C, and a connection terminal portion
disposed in the wiring area Ar2. And 416C.
[0042]
The lead-out wiring portion 416A is provided, for example, every other row of the plurality of
ultrasonic transducers 45 arranged along the Y direction, as shown in FIG. In the lead-out wiring
portion 416A, the upper electrodes 413C of the respective ultrasonic transducers 45 are
connected by the connecting portion 416B. The connection terminal portion 416C is formed in
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the wiring region Ar2 of the outer peripheral portion of the element substrate 41, and is
connected to the lead wiring portion 416A. The connection terminal portion 416C is connected
to a ground circuit (not shown) of the circuit board 23 through a wiring member (not shown),
and is set to a reference potential (for example, 0 potential). That is, the upper electrode 413C is
a common electrode to which a reference potential is applied.
[0043]
The bonding portion 417 bonds the element substrate 41 configured as described above and the
sealing plate 42. The bonding portion 417 is disposed at a position along the outer edge of the
element substrate 41 or a position along the ultrasonic transducer 45. For example, as illustrated
in FIG. 4, the bonding portion 417 is disposed along the X direction at a position overlapping the
partition wall 411B of the back surface 41A.
[0044]
The bonding portion 417 is formed using a material capable of bonding the element substrate 41
and the sealing plate 42, for example, a resin material such as various adhesives or a
photosensitive resin material (photoresist). In the present embodiment, the bonding portion 417
is formed using a photosensitive resin material. Thus, the bonding portion 417 can be formed at
a desired position and in a desired shape.
[0045]
(Structure of Wiring Portion) The wiring portion 415 has conductivity, is provided at a position
different from the ultrasonic transducer 45 on the back surface 41 A, and is conducted to the
ultrasonic transducer 45 via the lower electrode connecting wire 414. . Specifically, wiring
portion 415 has a substantially rectangular outer shape in a plan view as viewed from the Z
direction, and protrudes from lower electrode connection line 414 toward sealing plate 42 at a
position overlapping with partition portion 411B. It is provided, and is electrically connected to
the conduction part 5 mentioned later. That is, the lower electrode 413A of each ultrasonic
transducer 45 is electrically connected to the conductive portion 5 via the lower electrode
connection line 414 and the wiring portion 415. Also, one wiring portion 415 is provided for
each of the plurality of ultrasonic transducer groups 45A.
01-05-2019
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[0046]
As shown in FIG. 3, the end face of the wiring portion 415 on the sealing plate 42 side
(hereinafter also referred to as an end portion 415A) is the end face on the −Z side of the
piezoelectric element 413 of the ultrasonic transducer 45 (hereinafter, the Z side end face (Also
referred to as 413 D) is located closer to the sealing plate 42. Thereby, the interference with the
member (for example, conduction part 5 grade ¦ etc.,) Provided in the sealing plate 42 side and
the ultrasonic transducer 45 can be suppressed. For example, even if the ultrasonic transducer
45 is driven and the Z-side end surface 413D of the piezoelectric element 413 moves to the
sealing plate 42 side, the interference between the piezoelectric element 413 and the conductive
portion 5 can be suppressed.
[0047]
Such a wiring portion 415 is formed using, for example, a conductive material such as a metal
material or a resin material containing a conductive filler. For example, the wiring portion 415 is
formed by depositing a metal material on the lower electrode connection line 414 by electrolytic
plating. The planar shape of the wiring portion 415 in a plan view as viewed from the Z direction
is not limited to a rectangular shape, and may be a circle, an oval, various polygonal shapes, or
the like.
[0048]
(Structure of Sealing Plate) The sealing plate 42 shown in FIG. 3 and FIG. 5 is formed of, for
example, a semiconductor substrate or the like, and is bonded to the element substrate 41 by the
bonding portion 417 to reinforce the strength of the element substrate 41. As shown in FIG. 3,
the sealing plate 42 includes a semiconductor substrate 420A of Si or the like, and an insulating
layer 420B formed on the surface of the semiconductor substrate 420A. The insulating layer
420B is formed by subjecting the semiconductor substrate 420A to a thermal oxidation
treatment, and in FIG. 3, the insulating layer 420B is illustrated only on the inner surface 42A
side. In addition, since the material and thickness of the sealing plate 42 affect the frequency
characteristics of the ultrasonic transducer 45, it is preferable to set based on the center
frequency of the ultrasonic wave to be transmitted and received. As shown in FIG. 3, the sealing
plate 42 is provided with a groove 421, a conducting portion 5, a through electrode 424, and a
lower electrode wiring 425. The semiconductor substrate 420A and the insulating layer 420B
01-05-2019
16
(sealing plate 42) provided with the groove 421 and the conductive part 5 are included to
constitute a mounting structure.
[0049]
(Configuration of Through Electrode and Lower Electrode Wiring) The through electrode 424 is
formed of a conductive material, and penetrates the sealing plate 42 in the Z direction as shown
in FIG. 3. The through electrode 424 is connected to the conductive portion 5 on the inner
surface 42A side, and connected to the lower electrode wiring 425 on the outer surface 42B side.
The lower electrode wiring 425 is individually provided on the outer surface 42 B of the sealing
plate 42 with respect to the through electrode 424. The lower electrode wire 425 is connected to
the circuit board 23 through a wire (not shown) formed along the outer surface 42B. That is, the
conductive portion 5 is connected to the circuit board 23 through the through electrode 424 and
the lower electrode wiring 425. The through electrodes 424 may be three or more as long as at
least one through electrode 424 is formed for one conduction portion 5.
[0050]
(Structure of Groove) FIG. 6 is a cross-sectional view showing a schematic structure of a part of
the sealing plate 42 including the conductive portion 5 and the groove 421, and FIG. 7 is a plan
view. The groove portion 421 is a groove formed in the inner surface 42A at a position
overlapping the wiring portion 415 in a plan view as shown in FIGS. 3 and 5. As shown in FIG. 6,
the groove portion 421 of the present embodiment is formed so as to penetrate the insulating
layer 420B from the inner surface 42A to the outer surface 42B and extend over the
semiconductor substrate 420A. As shown in FIG. 7, the groove 421 has a substantially circular
opening edge 422 in a plan view. The groove portion 421 is formed in a mortar shape, and the
groove inner surface 423 is curved. In other words, the groove inner surface 423 has a curved
surface 423A that curves in a concave shape in plan view. That is, the diameter of the groove
421 in the cross section parallel to the XY plane becomes smaller as it goes from the inner
surface 42A to the outer surface 42B. In the present embodiment, the groove inner surface 423
has a flat bottom surface and a curved surface 423A surrounding the bottom surface in plan
view. Such a groove 421 is formed by dry etching or the like. That is, the curved surface 423A
has a substantially semicircular cross section (for example, a YZ cross section) along the Z
direction passing through the plane center O of the groove.
[0051]
01-05-2019
17
(Constitution of Conduction Portion) The conduction portion 5 covers the resin portion 51
provided in the groove portion 421 formed in the inner surface 42A and a part of the resin
portion 51, as shown in FIG. 3, FIG. 5 and FIG. And a conductive film 52 electrically connected to
the through electrode 424. The conductive portion 5 is in close contact with the wiring portion
415 provided on the element substrate 41 as shown in FIG. 3 and is electrically connected. That
is, when the sealing plate 42 is bonded to the element substrate 41, the conductive portion 5 is
in pressure contact with the end 415 A of the wiring portion 415, and the resin portion 51 and
the conductive film 52 constituting the conductive portion 5 are elastically deformed. The
conductive film 52 is in close contact with the wiring portion 415 by the restoring force of the
elastically deformed resin portion 51. Thereby, the reliability of the electrical connection between
the conductive part 5 and the wiring part 415 is improved.
[0052]
The conductive film 52 corresponds to a wire, and is provided from the position overlapping the
through electrode 424 of the inner surface 42A of the sealing plate 42 to the resin portion 51.
The conductive film 52 is provided along the Y direction in plan view, covers at least a part of the
resin portion 51 including the end on the + Z side, and is connected to the through electrode
424. By making the thickness of the conductive film 52 sufficiently smaller than that of the resin
portion 51, the resin portion 51 and the conductive film 52 can be elastically deformed.
[0053]
As a conductive material for forming such a conductive film 52, Au, Ag, TiW, Cu, Ni, Pd, Al, Cr, Ti,
W, NiCr or the like, lead-free solder or the like can be used. In the present embodiment, for
example, the conductive film 52 is configured by laminating a TiW layer (50 nm) and an Au layer
(100 nm) from the inner surface 42A side.
[0054]
The resin portion 51 corresponds to a resin protrusion and is formed of an elastic resin material.
As shown in FIG. 3, the resin portion 51 is provided in the groove portion 421, that is, provided
at a position overlapping the wiring portion 415 in plan view, and protrudes toward the element
01-05-2019
18
substrate 41 from the inner surface 42A. The resin portion 51 is provided along the groove inner
surface 423 and is in contact with the groove inner surface 423 and the opening end edge 422.
That is, the resin portion 51 is formed in the groove portion 421 so that no gap is generated
between the resin portion 51 and the opening end edge 422 in a plan view. The resin portion 51
is formed such that the diameter dimension of the cross section (substantially circular shape)
parallel to the XY plane becomes smaller toward the element substrate 41 side.
[0055]
The resin portion 51 as described above is made of a resin material provided in the groove
portion 421, and is formed, for example, by heat-melting the resin material and then solidifying
it. Thus, the resin portion 51 is formed along the groove inner surface 423 in the resin portion
51. A photosensitive resin material (photoresist) can be used as a material for forming the resin
portion 51. In this case, it is easy to form the resin portion 51 at a desired position in a desired
shape. In addition to the photosensitive resin material, various resin materials having elasticity,
for example, polyimide resin, acrylic resin, phenol resin, epoxy resin, silicone resin, modified
polyimide resin, etc. may be used as the material for forming the resin portion 51. Can.
[0056]
FIG. 8 is a cross-sectional view schematically showing the conductive portion 6 in the
comparative example. As shown in FIG. 8, the conductive portion 6 includes a resin portion 61
provided on a flat inner surface 42A, and a conductive film 62 provided from the inner surface
42A to the resin portion 61. The conductive portion 6 of the comparative example is basically
formed substantially the same as the conductive portion 5 except that the resin portion 61 is not
provided in the groove portion 421. That is, the resin portion 61 is formed into a substantially
hemispherical shape by thermally melting and then solidifying the resin material provided on the
inner surface 42A. Here, assuming that the maximum radius (radius of the bottom surface) of the
resin portion 61 in plan view is Lc and the height (dimension in the Z direction) of the resin
portion 61 is Ld, the maximum radius Lc of the resin portion 61 is the height It is substantially
the same as Ld (Lc = Ld).
[0057]
On the other hand, in the resin portion 51 of this embodiment, the maximum radius of the resin
01-05-2019
19
portion 51 in plan view is La, and the height of the resin portion 51 with respect to the inner
surface 42A (protrusion amount in the Z direction with respect to the inner surface 42A) is Lb. ,
La <Lb, and La and Lb satisfy the following formula (1). In the present embodiment, the
maximum radius of the resin portion 51 is the opening radius of the groove portion 421. For
example, when the maximum diameter is the same in the conductive portion 5 of the present
embodiment and the conductive portion 6 of the comparative example, the height Lb of the
conductive portion 5 of the present embodiment is larger than the height dimension of the
conductive portion 6 of the comparative example. That is, in the case of La = Lc, Lb> Ld.
Moreover, when height is the same in the conduction part 5 of this embodiment and the
conduction part 6 of the comparative example, the maximum radius La of the conduction part 5
is smaller than the maximum radius Lc of the conduction part 6 of the comparative example.
That is, in the case of Lb = Ld, La <Lc. That is, by providing the resin portion 61 in the groove
portion 421, the dimension in the Z direction can be made larger than the dimensions in the X
direction and the Y direction as compared with the case where the groove portion 421 is not
provided as in the comparative example. That is, the resin portion 51 has a larger aspect ratio
than the comparative example.
[0058]
[Equation 1] Lb / La> 1 (1)
[0059]
[Operation and Effect of First Embodiment] The ultrasonic device 22 according to the first
embodiment configured as described above can obtain the following effects.
The resin portion 51 constituting the conductive portion 5 is provided in the groove portion 421
formed in the sealing plate 42. In such a configuration, the aspect ratio of the resin portion 51
can be increased as compared with a configuration in which the resin portion 51 is not provided
in the groove portion 421. That is, as shown in FIG. 8, when the resin material is heated, melted
and re-solidified without providing the groove portion 421, the substantially hemispherical (that
is, the approximately 1 aspect ratio) resin portion 61 is formed as described above. Be done. On
the other hand, by providing the resin portion 51 in the groove portion 421, the heat-melted
resin material can be prevented from spreading in the planar direction (X direction and Y
direction), and the aspect ratio of the resin portion 51 can be increased. it can. In addition, since
the thickness of the conductive film 62 is very small with respect to the resin part 51, the aspect
ratio of the conduction part 5 can be increased by increasing the aspect ratio of the resin part 51.
01-05-2019
20
[0060]
Further, the planar shape of the resin portion 51 can be defined by the groove portion 421, and
the resin portion 51 can be formed at a desired position and range. Therefore, it is possible to
suppress the resin material from expanding beyond the design value and interfering with other
configurations (for example, other wirings and the like) provided on the sealing plate 42, and to
achieve high integration of the conductive portion 5. it can. Further, by restricting the expansion
range of the resin material by the groove portion 421, the planar shape of the resin portion 51 in
a plan view can be made a shape corresponding to the shape of the groove portion 421.
Therefore, it is easy to form the resin portion 51 having a desired planar dimension and height
dimension in a desired region, and consequently, high integration of the resin portion 51 and the
conductive film 52 can be achieved.
[0061]
The resin portion 51 is in contact with the opening end edge 422. That is, no gap is formed
between the resin portion 51 and the sealing plate 42 at the opening edge 422 which is the
boundary position between the resin portion 51 and the sealing plate 42. Therefore, when the
conductive film 52 extending from the sealing plate 42 to the resin portion 51 is formed, the gap
does not cause formation failure of the wiring at the boundary position, and the conductive film
52 can be appropriately formed.
[0062]
The groove inner surface 423 of the groove portion 421 is formed in a mortar shape. That is, the
groove inner surface 423 has a curved surface 423A that curves in a concave manner. The resin
portion 51 is formed along the groove inner surface 423 and is held by the groove inner surface
423. Therefore, for example, when the resin material is heated and melted to form the resin
portion 51, the molten resin material can be stably held by the groove inner surface 423. The
groove 421 having the above-described curved groove inner surface 423 can be easily formed by
performing wet etching on the sealing plate 42.
[0063]
01-05-2019
21
Second Embodiment Hereinafter, a second embodiment will be described. The second
embodiment is different from the configuration of the first embodiment in that a wall
surrounding the groove 421 is formed in the sealing plate 42, and a resin protrusion is provided
inside the wall. In the following description, the same components as those in the first
embodiment are denoted by the same reference numerals, and the description thereof is omitted
or simplified.
[0064]
FIG. 9 is a cross-sectional view schematically showing a part of the sealing plate 42 of the second
embodiment in an enlarged manner, and FIG. 10 is a plan view. As shown in FIGS. 9 and 10, the
inner wall 42A of the sealing plate 42 is provided with an annular wall 7 surrounding the groove
421 and the resin portion 51 in a plan view. The wall 7 has a base end 71 in contact with the
sealing plate 42, a top surface 72 on the opposite side (+ Z side) of the sealing plate 42 to the
inner surface 42A, and an inner surface on the groove 421 side (inner) in plan view And 73, and
an outer side surface 74 on the opposite side (outside) of the groove portion 421. The recess 70
including the groove 421 is formed by the inner surface 73 of the wall and the groove inner
surface 423. The resin portion 51 is provided in the recess 70 and is held by the groove inner
surface 423 and the inner surface 73.
[0065]
The base end portion 71 has an inner proximal end inner peripheral edge 711 and an outer
proximal end outer peripheral edge 712 in a plan view. The proximal inner circumferential edge
711 overlaps the opening edge 422 in plan view. That is, the wall 7 is formed along the opening
edge 422 in plan view. The top surface 72 has an inner distal end inner peripheral edge 721 and
an outer distal end outer peripheral edge 722 in a plan view. In plan view, the distal end side
inner peripheral edge 721 is located outside the proximal end side inner peripheral edge 711,
and the distal end side outer peripheral edge 722 is located inside the proximal end outer
peripheral edge 712.
[0066]
01-05-2019
22
Here, the tip side inner peripheral edge 721 is the opening end edge of the recess 70. The resin
portion 51 is in contact with the tip side inner peripheral edge 721. That is, the radius of the tip
side inner peripheral edge 721 corresponds to the maximum radius La of the resin portion 51.
Also in the present embodiment, the maximum radius La of the resin portion 51 and the height
Lb of the resin portion 51 with respect to the inner surface 42A satisfy the above-mentioned
equation (1). Further, the maximum radius Le of the wall portion 7 (that is, the radius of the
circular base end outer peripheral edge 712) and the height Lb of the resin portion 51 satisfy the
following formula (2). Therefore, when the height of the resin portion is the same as the
configuration without the groove portion 421 and the wall portion 7 as shown in FIG. 8, the wall
portion 7 of the maximum radius Lc of the resin portion 61 of the comparative example of FIG.
The maximum radius Le can be reduced, and the wiring can be highly integrated.
[0067]
[Equation 2] Lb / Le> 1 (2)
[0068]
The inner side surface 73 is a mortar-shaped curved surface located between the proximal inner
peripheral edge 711 and the distal inner peripheral edge 721, and is concavely curved.
The outer side surface 74 corresponds to the inclined portion, and is inclined from the proximal
outer periphery 712 toward the distal outer periphery 722. That is, the outer side surface 74
inclines outward in plan view as it goes from the top surface 72 to the sealing plate 42 (proximal
end portion 71). In the example shown in FIG. 9, the outer side surface 74 is concavely curved.
Moreover, although the outer side surface 74 is formed with the inclined part over the perimeter,
an inclined part may be formed in a part of the outer side surface 74. The conductive film 52 is
formed along the Y direction so as to straddle the outer surface 74, the top surface 72, and the
resin portion 51.
[0069]
The above-described wall 7 can be formed by dry etching or the like using a metal material or an
oxide material. As the metal material, for example, Au, Ag, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiCr or
the like can be used. By using a metal material, it is possible to suppress a decrease in connection
reliability due to disconnection or the like of the conductive film 52 in the wall portion 7.
01-05-2019
23
Moreover, as an oxide material, it is SiO2, various metal oxides, such as ZrO2, Al2O3, etc., for
example. By using the oxide material, the adhesion between the wall 7 and the resin portion 51
can be improved as compared with the metal material.
[0070]
[Operation and Effect of Second Embodiment] In the second embodiment, in addition to the same
operation and effect as the first embodiment, the following operation and effect can be obtained.
The resin portion 51 is provided in a recess 70 formed in the groove portion 421 and the wall
portion 7 formed in the inner surface 42A. In such a configuration, as in the first embodiment,
the aspect ratio of the resin portion 51 can be increased as compared with the case where the
resin portion 51 is not provided in the recess 70 and provided on the flat inner surface 42A.
[0071]
Here, by increasing the volume of the resin material, a higher resin portion 51 can be formed.
However, in the configuration in which the wall 7 is not formed, when the volume of the resin
material exceeds the allowable amount with respect to the volume of the groove 421, the molten
resin material may expand to the outside of the groove 421. On the other hand, by providing the
wall portion 7, the resin portion 51 can be provided in the recess 70 having a volume larger than
that of the groove portion 421, and the spread of the resin material can be suppressed more
reliably. Also, the volume tolerance of the resin material can be increased, and the height of the
resin material can be increased.
[0072]
A gap is not formed between the resin portion 51 and the wall portion 7 at the tip side inner
peripheral edge 721 which is the boundary position between the resin portion 51 and the wall
portion 7. Therefore, when forming the conductive film 52 from the sealing plate 42 to the resin
portion 51 so as to straddle the wall portion 7, it is possible to suppress the occurrence of a
problem that the conductive film 52 is not properly formed due to the gap. The conductive film
52 can be appropriately formed.
[0073]
01-05-2019
24
The inner surface 73 is concavely curved. Therefore, when the resin material is melted to form
the resin portion 51, the grooved portion 421 and the inner side surface 73 can stably hold the
melted resin material.
[0074]
The outer side surface 74 inclines to the outside in plan view as it goes from the top surface 72
to the proximal end 71. The conductive film 52 is formed on the inclined outer side surface 74.
In such a configuration, the formation failure of the conductive film 52 occurs compared to the
configuration in which the conductive film 52 is formed so as to straddle the step between the
top surface 72 and the inner surface 42A without the outer side surface 74 being inclined. It is
difficult to form an appropriate conductive film 52 more easily.
[0075]
Third Embodiment The third embodiment will be described below. The third embodiment is
different from the configuration of the second embodiment in that the base wiring is formed so
as to extend from the straddling groove portion 421 to the sealing plate 42 in the wall portion 7.
In the following description, the same components as those in the first embodiment are denoted
by the same reference numerals, and the description thereof is omitted or simplified.
[0076]
FIG. 11 is a cross-sectional view schematically showing a part of the sealing plate 42 of the third
embodiment in an enlarged manner, and FIG. 12 is a plan view. As shown in FIGS. 11 and 12, the
base wiring 8 is provided across the inside and the outside of the wall 7 and the groove 421 in
plan view. That is, the base wiring 8 is formed to cover the wall 7 and the groove 421. The resin
portion 51 and the conductive film 52 are stacked on the underlying wiring 8. That is, the resin
portion 51 is formed along the base wiring 8 inside the tip inner edge 721 of the top surface 72
of the wall 7 in plan view. The conductive film 52 is provided on the base wiring 8 outside the
resin portion 51 in plan view, that is, at a position overlapping the wall portion 7.
01-05-2019
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[0077]
The base wiring 8 is formed using various wiring materials having conductivity. As the wiring
material, for example, metal materials such as Au, Ag, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, and NiCr can
be used. Here, the base wiring 8 preferably has good adhesion to the conductive film 52. As a
result, peeling of the conductive film 52 from the underlying wiring 8 can be suppressed, and the
reliability of the electrical connection can be improved.
[0078]
Although the base wiring 8 covers the groove portion 421 and the wall portion 7, at least a part
of the wall portion 7 may be covered. For example, the base wiring 8 may be provided at a
position overlapping at least the wall 7 and the conductive film 52 in plan view. Furthermore, in
this case, a metal oxide or resin material having good adhesion to the resin portion 51 may be
used as the wall portion 7. That is, the resin portion 51 is formed on the wall portion 7 having
good adhesion to the resin portion 51 in a region not overlapping the conductive film 52 of the
wall portion 7 in a plan view. Thereby, the adhesiveness with respect to the sealing plate 42 of
both the resin part 51 and the electrically conductive film 52 can be improved.
[0079]
[Operation and Effect of Third Embodiment] In the third embodiment, in addition to the same
operation and effect as the second embodiment, the following operation and effect can be
obtained. The base wiring 8 covers at least a part of the wall section covering the inside and
outside of the wall section 7, and the conductive film 52 is formed on the base wiring 8. In such a
configuration, the conductive film 52 is a base on the boundary position between the inner side
surface 73 (top surface 72) and the resin portion 51, the boundary position between the outer
side surface 74 and the sealing plate 42, and the wall portion 7. It is formed on the wiring 8.
Therefore, disconnection of the conductive film 52 at each boundary position and on the top
surface 72 can be suppressed, and connection reliability can be improved.
[0080]
[Modification of Embodiment] The present invention is not limited to the above-described
01-05-2019
26
embodiments, and can be obtained by appropriately combining the modifications, improvements,
and the embodiments as long as the object of the present invention can be achieved. Is included
in the present invention. (Modification 1) FIG. 13 is a cross-sectional view schematically showing
a part of the sealing plate 42 in Modification 1 in an enlarged manner. In the above
embodiments, the groove 421 penetrates the insulating layer 420B from the inner surface 42A
to the outer surface 42B and is formed across the semiconductor substrate 420A. However, the
present invention is not limited to this. For example, as shown in FIG. 13, the groove portion 421
may be formed only in the insulating layer 420B. In such a configuration, for example, the groove
portion 421 can be formed by selectively removing only the insulating layer 420B by dry etching
or the like. The depth of the groove 421 can be adjusted by adjusting the thickness dimension of
the insulating layer 420B.
[0081]
In the above embodiments, the semiconductor substrate 420A is thermally oxidized to form the
insulating layer 420B, and then the groove 421 is formed. For example, after the groove 421 is
formed in the semiconductor substrate 420A, the insulating layer 420B is formed. May be
formed. In this case, the insulating layer 420B can be formed also on the groove inner surface
423 of the groove 421, and the insulation of the sealing plate 42 can be improved.
[0082]
(Modification 2) FIG. 14 is a cross-sectional view schematically showing a part of the sealing
plate 42 in a modification 2 in an enlarged manner. The wall portion 7 of the second
embodiment has an inner side surface 73 which is a concave surface which is inclined toward the
inside of the groove portion 421 as it goes from the top surface 72 to the base end portion 71
side, and an outside which is inclined toward the outside. And the side surface 74. On the other
hand, in the wall 7A of the second modification shown in FIG. 14, the inner surface 73 and the
outer surface 74 stand in the Z direction (the normal direction of the inner surface 42A). Such a
wall 7A is formed, for example, by performing dry etching or the like on a layer of a metal
material or an oxide film material. Further, the wall portion 7A is formed by depositing a metal
on the base layer provided in advance by an electrolytic plating method. The wall 7A is formed
by applying an adhesive, which is a resin material, around the groove 421. When a resin material
is used, a material having a melting point higher than that of the resin material constituting the
resin portion 51 is used. Thereby, even if the resin portion 51 is formed by heating and melting,
melting and deformation of the wall portion can be suppressed.
01-05-2019
27
[0083]
In addition, as shown in FIG. 14, the connection reliability at the boundary position between the
inner side surface 73 (the top surface 72) and the resin portion 51 is formed by forming the base
wiring 8 of the third embodiment so as to cover the wall 7A. It is possible to improve the quality.
Similarly, connection reliability at the boundary between the top surface 72 and the outer surface
74 and the boundary between the outer surface 74 and the sealing plate 42 can be improved.
[0084]
(Modification 3) FIG. 15 is a plan view schematically showing a part of the sealing plate 42 in a
modification 3 in an enlarged manner. In each of the embodiments and the modifications
described above, the resin portion 51 and the groove portion 421 are formed in a substantially
circular shape in plan view, but the present invention is not limited to this. As shown in FIG. 15, a
groove 426 is formed on the inner surface 42A of the sealing plate 42. The groove portion 426
is formed substantially the same as the groove portion 421 of each of the above embodiments
except that it has an oval shape (elliptical shape) whose longitudinal direction is the X direction
in plan view. That is, the groove inner surface of the groove portion 426 is curved in a mortar
shape. The groove portion 426 has an equal width portion 426A having the same dimension in
the Y direction.
[0085]
The conductive portion 5A is provided in the groove portion 426, and a plurality of resin
portions 51A having an oval shape like the groove portions 426 and a plurality of resin portions
51A formed along the Y direction orthogonal to the longitudinal direction (FIG. And the two
conductive films 52). At the central portion 511 provided in the equal width portion 426A of the
groove portion 426 of the resin portion 51A, the height dimension (dimension in the Z direction)
increases toward the center in the Y direction before elastic deformation. In the central portion
511, the height dimension (maximum dimension) at the central position in the Y direction is
substantially constant along the X direction. The cross section parallel to the YZ plane passing
through the central portion 511 is substantially the same as in the first embodiment (see FIG. 6).
The plurality of conductive films 52 are provided so as to straddle the equal width portion 426A
of the groove 421, that is, to straddle the central portion 511 in plan view. Each of the plurality
of conductive films 52 is provided with the through electrode 424 and is individually connected
01-05-2019
28
to the circuit board 23. The cross section of the sealing plate 42 of the third modification in a
plane parallel to the YZ plane through the central portion 511 and the conductive film 52 is
substantially the same as the configuration of the first embodiment shown in FIG.
[0086]
In the configuration according to the third modification, since the conductive portion 5A has an
oval shape whose longitudinal direction is the X direction, a plurality of conductive films can be
formed along the Y direction. In addition, the conductive film 52 is provided so as to straddle the
equal width portion 426A of the groove portion 421 in plan view. That is, since the plurality of
conductive films 52 are provided so as to straddle the central portion 511 where the maximum
dimension in the Z direction is substantially constant along the X direction, the variation in the
maximum position of the conductive film 52 in the Z direction is suppressed. Thus, the
connection reliability between the conductive portion 5A and the wiring portion 415 can be
improved.
[0087]
(Modification 4) FIG. 16 is a plan view schematically showing a part of the sealing plate 42 in a
modification 4 in an enlarged manner. As shown in FIG. 16, similarly to the second embodiment
of the first embodiment, in addition to the configuration of the third modification, a wall 7A
surrounding the groove 426 and the resin portion 51A is formed on the sealing plate 42. It is
also good. The wall portion 7A is configured in the same manner as the wall portion 7 of the
second embodiment except that the outer shape in a plan view has an oval shape whose
longitudinal direction is the X direction. That is, the wall portion 7A is formed along the opening
edge of the groove portion 426, and the resin portion 51A is in contact with the inner peripheral
edge of the top surface of the wall portion 7A. The wall portion 7A has two straight portions 75
formed linearly in the X direction along the equal width portion 426A of the groove portion 426.
The two straight portions 75 are provided at positions sandwiching the central portion 511 in
the Y direction. In addition, it is preferable that the inner side surface of the wall 7A be concavely
curved. The resin portion 51A can be more reliably held on the sealing plate 42 by this inner side
surface. In addition, the outer surface of the wall 7A is preferably inclined, so that the conductive
film 52 can be appropriately formed at a position overlapping the outer surface in a plan view,
and connection reliability can be improved.
[0088]
01-05-2019
29
By forming the wall portion 7A of an insulating material such as an oxide film material or a resin
material, the plurality of conductive films 52 can be prevented from being electrically connected.
Therefore, the plurality of conductive films 52 can be individually connected to the circuit board
23. For example, in the case where a common signal is input or output to each conductive film
52, the wall 7A may be formed of a metal material which is a conductive material. Thereby, the
plurality of conductive films 52 can be connected to each other through the wall portion 7A
without providing a connection wiring that connects the plurality of conductive films 52.
[0089]
(Modification 5) FIG. 17 is a plan view schematically showing a part of the sealing plate 42 in a
modification 5 in an enlarged manner. As shown in FIG. 17, in addition to the configuration of
the fourth modification, the base wiring 8A may be formed on the sealing plate 42, as in the third
embodiment of the second embodiment. The base wiring 8A is provided at least at a position
overlapping each of the plurality of conductive films 52 in plan view. In the fifth modification
shown in FIG. 17, the base wiring 8A is formed in a straight line along the Y direction in plan
view, and covers the groove 426 and a part of the wall 7A. The resin portion 51A and the
conductive film 52 are stacked on the base wiring 8A at a position overlapping the groove
portion 426 in plan view. Further, in the plan view, the conductive film 52 is stacked on the base
wiring 8A outside the groove 426.
[0090]
When a common signal is input to or output from the plurality of conductive films 52, the wall
7A is formed of an insulating material, and one base wiring 8A is disposed at a position
overlapping all of the plurality of conductive films 52. You may form. Thereby, the plurality of
conductive films 52 can be connected to each other through the wall portion 7A without
providing a connection wiring that connects the plurality of conductive films 52. Further, in the
case where a signal common to all the conductive films 52 is input or output, one base wiring 8A
may be formed at a position overlapping with all the conductive films 52.
[0091]
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30
(Modification 6) FIG. 18 is a plan view schematically showing a part of the sealing plate 42 in a
modification 6 in an enlarged manner. As shown in FIG. 18, in the sixth modification, the
diameter dimension of the opening end edge 422 of the groove portion 421 is larger than the
diameter dimension of the proximal end side inner circumferential edge 711 of the wall portion
7 with respect to the second embodiment. That is, in the plan view, the proximal inner
circumferential edge 711 is located inside the opening edge 422. The resin portion 51 is filled in
the inside of the groove portion 421 and is a region between the proximal inner edge 711 and
the opening end edge 422 in plan view, and is also filled in the lower side (−Z side) of the wall
portion 7 Ru. That is, the resin portion 51 is provided in the recess 70 so that the base end side
inner peripheral edge 711 of the wall portion 7 is inserted toward the plane center (center in the
X direction and Y direction) of the resin portion 51. With such a configuration, it is possible to
more reliably suppress peeling of the resin portion 51 from the sealing plate 42 when shear
stress in a direction parallel to the XY plane acts on the resin portion 51.
[0092]
In the configuration in which the wall portion is not provided as described in the first
embodiment, for example, the opening diameter of the semiconductor substrate 420A may be
larger than the opening diameter of the insulating layer 420B. In this case, the resin portion 51 is
provided in the groove portion 421 so that the opening end edge of the insulating layer 420B is
inserted into the resin portion 51. Thereby, peeling of the resin portion 51 from the sealing plate
42 due to shear stress can be more reliably suppressed.
[0093]
(Other Modifications) Although the diameter dimension of the base end side inner peripheral
edge 711 of the wall portion 7 is larger than the diameter dimension of the open end edge 422
of the groove portion 421 in the second embodiment, the present invention is limited thereto I
will not. For example, the diameter dimension of the open end edge 422 of the groove 421 may
be larger than the diameter dimension of the proximal end side inner circumferential edge 711
of the wall portion 7. Further, in the configuration in which the wall portion is not provided as
described in the first embodiment, for example, the opening diameter of the insulating layer
420B may be larger than the opening diameter of the semiconductor substrate 420A.
[0094]
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31
In each of the above embodiments, the wiring portion may have a covering portion that covers
the wiring portion. The contact resistance between the wiring portion and the conducting portion
can be reduced by forming this covering portion using a material having a relatively high electric
conductivity such as Au. Further, when the conductive film of the conductive portion and the
covering portion are formed using Au, connection reliability can be improved by diffusion
bonding between the Au layers.
[0095]
In each of the above embodiments, the wiring portion has a rectangular shape and has a
configuration in which it protrudes from the element substrate 41 to the sealing plate 42 side.
However, the wiring portion is not limited to the above configuration, and may be, for example, a
conductive film or the like formed on the element substrate 41. That is, the wiring portion may
be thinner than the functional element such as the piezoelectric element and may not protrude
toward the sealing plate 42 side.
[0096]
In the above embodiments, two ultrasonic transducers 45 constitute an ultrasonic transducer
group 45A which is a transmitting / receiving channel, but three or more ultrasonic transducers
45 constitute an ultrasonic transducer group 45A. May be Further, the lower electrode 413A of
each ultrasonic transducer 45 may be independent, and each ultrasonic transducer 45 may be
configured to be individually drivable. In this case, each ultrasonic transducer 45 can also
function as one transmission / reception channel.
[0097]
In each of the above embodiments, the ultrasonic transducer group 45A as one transmission /
reception channel has a two-dimensional array structure arranged in a matrix in the array area
Ar1 of the element substrate 41. However, the present invention is not limited thereto. For
example, the ultrasound device may have a one-dimensional array structure in which
transmission and reception channels are arranged in a plurality along one direction. For example,
an ultrasonic transducer group 45A is configured by a plurality of ultrasonic transducers 45
arranged in the X direction, and a plurality of ultrasonic transducer groups 45A are arranged in
01-05-2019
32
the Y direction, and an ultrasonic array UA of a one-dimensional array structure May be
configured.
[0098]
In each of the above embodiments, as the ultrasonic transducer 45, the configuration including
the vibrating film 412 and the piezoelectric element 413 formed on the vibrating film 412 is
exemplified, but the invention is not limited thereto. For example, as the ultrasonic transducer
45, a configuration including a flexible portion, a first electrode provided on the flexible portion,
and a second electrode provided at a position facing the first electrode in the sealing plate It may
be adopted. The first electrode and the second electrode constitute an electrostatic actuator as a
vibrator. In such a configuration, ultrasonic waves are transmitted by driving the electrostatic
actuator, and ultrasonic waves are detected by detecting the capacitance between the electrodes.
[0099]
In each of the above embodiments, as the electronic device, the ultrasonic apparatus in which an
organ in a living body is to be measured is exemplified, but the present invention is not limited
thereto. For example, the configurations of the above-described embodiment and each
modification can be applied to a measuring machine that performs detection of defects of the
structures and inspection of deterioration with various structures as objects to be measured. In
addition, for example, the same applies to a measuring device that detects a defect of a
measurement target with a semiconductor package, a wafer, or the like as the measurement
target. Further, the same applies to a recording apparatus provided with an inkjet head which
drives a piezoelectric element to eject an ink droplet.
[0100]
In each of the above embodiments, the configuration in which the ultrasonic transducer is
provided on the element substrate has been illustrated, but the present invention is not limited to
this. For example, an electronic component such as a semiconductor IC, that is, a substrate, a
functional element provided on the substrate, a resin portion (resin protrusion), and a conductive
film (wiring) connected to the functional element are provided. The configurations of the abovedescribed embodiment and each modification can be adopted in a mounting structure in which
electrical connection is made to a substrate, and various electronic devices including the
01-05-2019
33
mounting structure.
[0101]
In addition, the specific structure in the practice of the present invention may be configured by
appropriately combining the above-described embodiments and modifications within the range in
which the object of the present invention can be achieved. You may
[0102]
DESCRIPTION OF SYMBOLS 1 ... Ultrasonic measurement apparatus, 2 ... Ultrasonic probe, 5, 5A,
6 ... Conduction part, 7, 7A ... Wall part, 8, 8A ... Base wiring, 10 ... Control apparatus, 21 ...
Housing ¦ casing, 22 ... Ultrasonic wave Device, 42: Sealing plate, 42A: Inner surface, 45:
Ultrasonic transducer, 51, 51A, 61: Resin part, 52: Conductive film, 72: Top surface, 420A:
Semiconductor substrate, 420B: Insulating layer, 421, 426 ... groove portion 422 ... opening edge,
423 ... groove inner surface.
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