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JP2007071821

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DESCRIPTION JP2007071821
PROBLEM TO BE SOLVED: To suppress a change in vibration characteristics of a diaphragm
provided in a semiconductor chip in a semiconductor device provided with a semiconductor chip
such as a sound pressure sensor chip. SOLUTION: A semiconductor chip 9 formed of silicon and
provided with a thin film diaphragm 9a vibrating in response to pressure fluctuation is mounted
on a surface 7a of an integrated circuit substrate 7 made of silicon. An apparatus 1 is provided.
The semiconductor device 1 is also characterized in that the semiconductor chip 9 and the
integrated circuit substrate 7 are electrically connected to each other. [Selected figure] Figure 1
Semiconductor device
[0001]
The present invention relates to a semiconductor device provided with a semiconductor chip
such as a sound pressure sensor chip or a pressure sensor chip.
[0002]
Conventionally, as semiconductor devices such as silicon microphones and pressure sensors,
there is one in which a semiconductor chip made of silicon is mounted on the surface of a circuit
board made of ceramic (see, for example, Patent Document 1).
The semiconductor chip of this type is formed with a thin film-like diaphragm for detecting
pressure fluctuation such as sound. The detection of the pressure fluctuation is performed based
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on the vibration of the diaphragm. Japanese Patent Publication No. 2004-537182
[0003]
However, the thermal expansion coefficients of the silicon forming the semiconductor chip and
the ceramic forming the circuit substrate are different from each other. Therefore, in the
configuration in which the semiconductor chip is directly mounted on the circuit board as in the
conventional semiconductor device described above, when the semiconductor device is heated or
cooled, stress is generated in the diaphragm according to the difference in the thermal expansion
coefficient described above. There is a problem that the vibration characteristic of the diaphragm
changes due to pressure fluctuation such as acoustics. That is, in the above-described
conventional semiconductor device, there is a problem that the characteristic of the
semiconductor chip is changed, and the pressure fluctuation can not be detected with high
accuracy. The present invention has been made in view of the above-described circumstances,
and an object thereof is to provide a semiconductor device capable of suppressing a change in
vibration characteristics of a diaphragm.
[0004]
In order to solve the above-mentioned subject, this invention proposes the following means. The
semiconductor device according to the first aspect of the present invention is characterized in
that a semiconductor chip formed of silicon and provided with a thin film diaphragm that
vibrates according to pressure fluctuation is mounted on the surface of an integrated circuit
substrate made of silicon. The device is proposed. According to the semiconductor device of the
present invention, since the integrated circuit substrate is formed of the same silicon as the
semiconductor chip mounted thereon, the semiconductor chip and the integrated circuit
substrate have the same thermal expansion coefficient. Therefore, even if this semiconductor
device is heated or cooled, it is possible to suppress the occurrence of stress in the diaphragm of
the semiconductor chip based on the difference in thermal expansion coefficient, and to suppress
the change in the vibration characteristic of the diaphragm.
[0005]
When the semiconductor device is mounted on the surface of a mounting substrate having a
thermal expansion coefficient different from silicon, the semiconductor device is mounted such
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that the integrated circuit substrate is disposed between the semiconductor chip and the
mounting substrate. It may be attached to the substrate. Thereby, even if the mounting substrate
and the semiconductor device are heated or cooled and stress is generated between the
mounting substrate and the integrated circuit substrate based on the difference between the
thermal expansion coefficients of the ceramic and the silicon, the integrated circuit substrate is
Stress can be relieved. Therefore, it is possible to suppress that stress is generated in the
diaphragm to change its vibration characteristics.
[0006]
The invention according to claim 2 proposes the semiconductor device according to claim 1,
wherein the semiconductor chip and the integrated circuit substrate are electrically connected to
each other. When the semiconductor device according to the present invention is mounted on the
mounting substrate, the semiconductor chip can be electrically connected to the mounting
substrate simply by electrically connecting the integrated circuit substrate and the mounting
substrate. The semiconductor device can be easily mounted on the mounting substrate.
[0007]
The invention according to claim 3 is characterized in that, in the semiconductor device
according to claim 2, the electrical connection is performed between the surface of the integrated
circuit substrate and an opposing surface of the semiconductor chip opposed thereto. Proposed a
semiconductor device. According to the semiconductor device of the present invention, since the
semiconductor chip can be fixed to the surface of the integrated circuit substrate by soldering
and at the same time electrical connection of the semiconductor chip and the integrated circuit
substrate can be performed, the manufacturing efficiency of the semiconductor device can be
improved. be able to.
[0008]
The invention according to claim 4 is characterized in that, in the semiconductor device
according to claim 2 or 3, the integrated circuit substrate is configured to include an integrated
circuit for operating the semiconductor chip. A semiconductor device is proposed. The integrated
circuit indicates, for example, an amplification circuit for amplifying an electric signal from a
semiconductor chip, a DSP (digital signal processor) for processing the electric signal as a digital
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signal, an A / D converter, and the like. . According to the semiconductor device of the present
invention, it is not necessary to separately configure the integrated circuit with electronic
components and to dispose the electronic components on the surface of the integrated circuit
substrate, thereby reducing the mounting area of the integrated circuit substrate on the
mounting substrate. Thus, space saving of the semiconductor device can be easily achieved.
[0009]
The invention according to claim 5 is the semiconductor device according to any one of claims 1
to 4, wherein the integrated circuit substrate is penetrated in a thickness direction from its
surface to its back surface. The present invention proposes a semiconductor device characterized
in that According to the semiconductor device of the present invention, since the through
electrode unit is exposed on the back surface of the integrated circuit substrate, the through
electrode unit is fixed to the mounting substrate with the back surface of the integrated circuit
substrate facing the front surface of the mounting substrate. Thus, the electrical connection
between the integrated circuit substrate and the mounting substrate can be performed
simultaneously with the fixing. Therefore, the mounting operation of the semiconductor device
on the mounting substrate can be performed in a short time. In addition, since it becomes
possible to electrically connect the mounting substrate and the integrated circuit substrate in the
mounting region facing the back surface of the integrated circuit substrate on the surface of the
mounting substrate, the semiconductor device substantially corresponds to the mounting
substrate. It is possible to reduce the mounting area.
[0010]
The invention according to claim 6 relates to the semiconductor device according to any one of
claims 1 to 5, wherein a recess recessed from the surface is formed in the integrated circuit
substrate, and the diaphragm is provided with the recess. A semiconductor device characterized
in that it is disposed to cover is proposed. According to the semiconductor device of the present
invention, the hollow portion between the diaphragm and the integrated circuit substrate can be
sufficiently secured by forming the concave portion. Therefore, it is possible to suppress pressure
change in the hollow portion based on the vibration of the diaphragm and to detect pressure
fluctuation such as sound accurately by the semiconductor chip. Here, since the integrated circuit
substrate is formed of silicon, the concave portion can be formed by the same etching as the
manufacturing process of the integrated circuit substrate. That is, the formation of the recess can
be easily performed.
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[0011]
The invention according to claim 7 is the semiconductor device according to any one of claims 1
to 6, wherein the integrated circuit is at least in a region overlapping with the semiconductor
chip in a thickness direction of the integrated circuit substrate. There is proposed a
semiconductor device characterized in that a conductive shield portion is formed along the
surface of a substrate. The invention according to claim 8 is the semiconductor device according
to any one of claims 1 to 7, wherein the surface of the semiconductor chip facing in the same
direction as the surface of the integrated circuit substrate is electrically conductive. In the
semiconductor device, a shield layer is provided.
[0012]
According to the semiconductor device according to these inventions, even if the electromagnetic
wave generated on the outer side of the semiconductor device tries to intrude from the back side
of the integrated circuit substrate or the front side of the semiconductor chip, the
electromagnetic wave is semiconductor in the shield portion or shield layer. It is possible to
prevent the chip from reaching the chip, and to prevent the occurrence of a malfunction in the
semiconductor chip based on this electromagnetic wave. Further, since the integrated circuit
substrate and the semiconductor chip are formed of silicon, the shield portion and the shield
layer can be formed simultaneously with the manufacturing process of the integrated circuit
substrate and the semiconductor chip, and the manufacturing efficiency of the semiconductor
device can be improved. it can.
[0013]
The invention according to claim 9 is the semiconductor device according to any one of claims 1
to 8, wherein at least the periphery of the semiconductor chip and the integrated circuit
substrate is in such a manner that the diaphragm communicates with the outward space. In the
semiconductor device, the semiconductor device is provided with a covering portion that covers
the semiconductor device. The invention according to claim 10 is the semiconductor device
according to claim 9, wherein the covering portion includes a resin portion for integrally fixing
the semiconductor chip and the integrated circuit substrate. Is proposed.
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[0014]
According to the semiconductor device of the invention, the semiconductor chip and the
integrated circuit substrate are covered by the covering portion, so that the semiconductor chip
and the integrated circuit substrate can be easily protected. That is, the semiconductor device can
be easily handled without touching the semiconductor chip or the integrated circuit substrate.
Further, when the covering portion is made of a resin portion, the connection state between the
semiconductor chip and the integrated circuit substrate can be reliably maintained.
[0015]
According to the first aspect of the present invention, since the semiconductor chip and the
integrated circuit substrate on which the semiconductor chip is mounted are formed of the same
silicon, even if the semiconductor device is heated or cooled, the semiconductor chip is obtained
based on the difference in thermal expansion coefficient. It is possible to suppress the generation
of stress in the diaphragm and to suppress the change in the vibration characteristic of the
diaphragm.
[0016]
According to the second aspect of the present invention, by electrically connecting the
semiconductor chip and the integrated circuit substrate to each other, the semiconductor chip
and the mounting substrate can be mounted only by electrically connecting the integrated circuit
substrate and the mounting substrate to each other. Since the substrate can be electrically
connected, the mounting operation of the semiconductor device on the mounting substrate can
be performed in a short time.
[0017]
According to the third aspect of the present invention, since the semiconductor chip can be fixed
to the surface of the integrated circuit substrate and at the same time electrical connection of the
semiconductor chip and the integrated circuit substrate can be made Can be implemented.
[0018]
Further, according to the invention of claim 4, by arranging the semiconductor chip and the
integrated circuit substrate including the integrated circuit in an overlapping manner, the
mounting area of the integrated circuit substrate on the mounting substrate can be reduced, and
the semiconductor device can be saved. Since space can be easily realized, the various electronic
devices provided with the semiconductor device can be miniaturized.
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[0019]
According to the invention of claim 5, the semiconductor device can be mounted on the
mounting substrate in a short time by forming the through electrode portion penetrating from
the front surface to the back surface on the integrated circuit substrate. It is possible to reduce
the substantial mounting area of the semiconductor device on the substrate.
[0020]
Further, according to the invention of claim 6, the concave portion for improving detection
accuracy of pressure fluctuation such as acoustic by the semiconductor chip can be formed by
the same etching as the manufacturing process of the integrated circuit substrate. The
manufacturing efficiency of the device can be improved.
[0021]
Further, according to the invention of the seventh and eighth aspects, by forming a shield portion
or a shield layer on the integrated circuit substrate or the semiconductor chip, the
electromagnetic wave generated on the outer side of the semiconductor device can be formed on
the semiconductor chip. It is possible to prevent the arrival and to prevent the occurrence of a
malfunction in the semiconductor chip based on this electromagnetic wave.
Further, since the shield part and the shield layer can be formed simultaneously with the
manufacturing process of the integrated circuit substrate and the semiconductor chip, the
manufacturing efficiency of the semiconductor device can be improved.
[0022]
According to the ninth and tenth aspects of the present invention, since the semiconductor chip
and the integrated circuit substrate are protected by the covering portion, the semiconductor
device can be easily handled.
Furthermore, according to the invention of claim 10, since the semiconductor chip and the
integrated circuit substrate are integrally fixed by the resin portion, the connection state between
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the semiconductor chip and the integrated circuit substrate can be reliably maintained.
[0023]
Embodiments of the present invention will be described based on the drawings.
In the following description of the respective embodiments, the same parts will be denoted by the
same reference numerals, and overlapping descriptions will be omitted.
[0024]
FIG. 1 shows a first embodiment of the present invention.
As shown in FIG. 1, the semiconductor device 1 according to this embodiment is configured to be
mounted on the surface 3 a of the mounting substrate 3.
The mounting substrate 3 is provided to various electronic devices such as mobile phones, and is
formed of a so-called multilayer wiring substrate in which an electrical wiring portion (not
shown) is provided.
Further, on the surface 3 a of the mounting substrate 3, a plurality of pads 5 are formed, which
are electrically connected to the above-mentioned wiring portion and electrically connected to
the semiconductor device 1 described later.
[0025]
The semiconductor device 1 includes an integrated circuit substrate 7 and a semiconductor chip
9 mounted on the surface 7 a thereof. The integrated circuit substrate 7 and the semiconductor
chip 9 are formed of silicon. The semiconductor chip 9 is a so-called sound pressure sensor chip
that converts sound into an electrical signal, and includes a diaphragm 9 a that vibrates in
response to pressure fluctuations such as sound reaching the semiconductor chip 9. The
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diaphragm 9 a is configured to vibrate in the thickness direction of the semiconductor chip 9.
The integrated circuit substrate 7 is fixed to the mounting substrate 3 between the back surface
7 b and the front surface 3 a of the mounting substrate 3 via an adhesive (not shown) such as
silver paste. A through hole (concave portion) 11 penetrating in the thickness direction is formed
in the integrated circuit substrate 7. The semiconductor chip 9 described above is disposed so as
to cover the through hole 11 with the diaphragm 9a. That is, the hollow portion S1 between the
diaphragm 9a and the integrated circuit substrate 7 can be enlarged by the through hole 11.
[0026]
Further, inside the integrated circuit substrate 7, a thin film shaped shield portion 13 and various
integrated circuits (not shown) are formed. The integrated circuit is for operating the
semiconductor chip 9, and for example, an amplification circuit for amplifying an electric signal
from the semiconductor chip 9, a DSP (digital signal processor) for processing the electric signal
as a digital signal , A / D converter etc. The shield portion 13 has conductivity and is formed
along the surface 7 a of the integrated circuit substrate 7. The shield portion 13 is formed inside
the integrated circuit substrate 7 by metal sputtering in the manufacturing process of the
integrated circuit substrate 7. Preferably, the shield portion 13 is formed at a position close to
the surface 7 a of the integrated circuit substrate 7.
[0027]
In addition, on the surface 7 a of the integrated circuit substrate 7 or in the inside, a wiring
portion for electrically connecting the semiconductor chip 9, the mounting substrate 3, and the
integrated circuit described above to each other or grounding the shield portion 13 described
above Not shown). The wiring portion includes a plurality of pads 15 and 17 formed on the
surface 7 a of the integrated circuit substrate 7. The electrical connection between the
semiconductor chip 9 and the integrated circuit substrate 7 includes a plurality of bump
electrodes 19 formed of solder so as to protrude from the facing surface 9 b of the
semiconductor chip 9 facing the integrated circuit substrate 7. It is performed by bonding to the
pad 15. That is, the semiconductor chip 9 and the integrated circuit substrate 7 are fixed to each
other by the bonding of the bump electrode 19 and the pad 15. Further, the electrical connection
between the integrated circuit board 7 and the mounting board 3 is made by the pads 5 formed
on the surface 3 a of the mounting board 3 adjacent to the mounting area of the integrated
circuit board 7 and the integrated circuit board 7 described above. The wire 21 is disposed
between the pad 17 and the pad 17.
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[0028]
In manufacturing the semiconductor device 1 configured as described above, first, the integrated
circuit substrate 7 is manufactured. In the manufacturing process of the integrated circuit
substrate, the integrated circuit, the shield portion 13 and the wiring portion including the pads
15 and 17 are appropriately stacked and formed by etching or sputtering. Next, the through
holes 11 are formed in the integrated circuit substrate 7 by deep etching. The method of deep
etching may be either dry etching or wet etching. However, in order to form the through holes
11 having a desired size, it is more preferable to carry out by dry etching such as Deep RIE (Deep
Reactive Ion Etching).
[0029]
Finally, the semiconductor chip 9 is disposed on the surface 7 a of the integrated circuit
substrate 7 so as to cover the through holes 11, and the pad 15 of the integrated circuit
substrate 7 is bonded to the bump electrode 19 of the semiconductor chip 9. The manufacture of
the device 1 is finished. When the semiconductor device 1 manufactured as described above is
mounted on the surface 3 a of the mounting substrate 3, an adhesive such as silver paste is used
to fix the mounting substrate 3 and the integrated circuit substrate 7 to each other and wire
bonding Thus, the wire 21 may be disposed between the mounting substrate 3 and the pads 5
and 17 of the integrated circuit substrate 7.
[0030]
According to the semiconductor device 1 described above, since the integrated circuit substrate 7
is formed of the same silicon as the semiconductor chip 9 mounted thereon, the integrated
circuit substrate 7 and the semiconductor chip 9 have the same thermal expansion coefficient.
Therefore, even if the semiconductor device 1 is heated or cooled, it is possible to suppress the
generation of stress in the diaphragm 9a of the semiconductor chip 9 based on the difference in
thermal expansion coefficient, and to suppress the change in the vibration characteristic of the
diaphragm 9a. In addition, the influence of the thermal load of the junction between the
integrated circuit substrate 7 and the semiconductor chip 9 can be canceled when the
semiconductor device 1 is assembled. In addition, even if the mounting substrate 3 on which the
semiconductor device 1 is mounted is formed of a material such as ceramic or the like having a
thermal expansion coefficient different from that of silicon, the integrated circuit substrate 7 is
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formed between the semiconductor chip 9 and the mounting substrate 3. Even if stress is
generated between the mounting substrate 3 and the integrated circuit substrate 7 based on the
difference in thermal expansion coefficient between ceramic and silicon, the stress is relieved in
the integrated circuit substrate 7 by arranging the be able to. Therefore, it is possible to suppress
the occurrence of stress in the diaphragm 9a and the change of its vibration characteristic.
[0031]
Furthermore, by bonding the pads 15 of the integrated circuit substrate 7 and the bump
electrodes 19 of the semiconductor chip 9, fixing and electrical connection between the
integrated circuit substrate 7 and the semiconductor chip 9 can be simultaneously performed.
The manufacturing efficiency can be improved. Further, by electrically connecting the integrated
circuit substrate 7 and the semiconductor chip 9 to each other in advance, the semiconductor
chip 9 and the mounting substrate 3 can be obtained by merely electrically connecting the
mounting substrate 3 and the integrated circuit substrate 7 to each other. Since electrical
connection is possible, the mounting operation of the semiconductor device 1 on the mounting
substrate 3 can be performed in a short time.
[0032]
Furthermore, since the integrated circuit for operating the semiconductor chip 9 is formed on the
integrated circuit substrate 7, the mounting area of the integrated circuit substrate 7 on the
mounting substrate 3 can be reduced, and the space saving of the semiconductor device 1 can be
facilitated. Can be That is, since it is not necessary to separately configure the integrated circuit
with electronic components and to dispose the electronic components on the surface 7 a of the
integrated circuit substrate 7, the mounting area of the integrated circuit substrate 7 on the
mounting substrate 3 can be reduced. Therefore, the space saving of the semiconductor device 1
can miniaturize various electronic devices provided with the semiconductor device 1.
[0033]
In addition, by forming the through holes 11 in the integrated circuit substrate 7, the cavity S1
between the integrated circuit substrate 7 and the diaphragm 9a can be sufficiently secured, so
that the pressure change in the cavity S1 based on the vibration of the diaphragm 9a. Pressure
can be detected by the semiconductor chip 9 with high accuracy. Further, since the volume of the
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hollow portion S1 can be expanded by the through hole 11, the pressure in the hollow portion S1
may be increased by the gas generated when bonding the mounting substrate 3 and the
integrated circuit substrate 7 to each other. It can be suppressed. Therefore, it is possible to
prevent the deformation of the diaphragm 9a due to the pressure increase of the hollow portion
S1, and to prevent the change of the vibration characteristic of the diaphragm 9a.
[0034]
Furthermore, since the integrated circuit substrate 7 is formed of silicon, the through holes 11
can be formed by the same etching as the manufacturing process of the integrated circuit
substrate 7. That is, in the semiconductor device 1, after the substrate made of ceramic or resin is
manufactured as in the conventional case, the through holes 11 are easily formed as compared
with the case where the through holes similar to the integrated circuit substrate 7 are formed.
can do. Therefore, the manufacturing efficiency of the semiconductor device 1 can be improved.
[0035]
Further, by forming the shield portion 13 inside the integrated circuit substrate 7,
electromagnetic waves generated on the outer side of the semiconductor device 1 can be
prevented from reaching the semiconductor chip 9 from the integrated circuit substrate 7 side.
Malfunction can be prevented from occurring in the semiconductor chip 9 based on the
electromagnetic wave. In particular, by forming the shield portion 13 in the vicinity of the
semiconductor chip 9, the electromagnetic wave can be reliably prevented from reaching the
semiconductor chip 9. Furthermore, since the shield part 13 can be formed simultaneously with
the manufacturing process of the integrated circuit substrate 7, the manufacturing efficiency of
the semiconductor device 1 can be improved. That is, in the semiconductor device 1, after the
circuit board made of ceramic is manufactured as in the prior art, there is no need to separately
perform the metallization process for bonding the conductive shield portion to the surface of the
circuit board. The manufacturing efficiency can be improved.
[0036]
In the first embodiment described above, although the through hole 11 penetrating in the
thickness direction is formed in the integrated circuit substrate 7, the present invention is not
limited to this, and at least the diaphragm 9a and the integrated circuit substrate 7 are The
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volume of the hollow portion S1 between them can be expanded. That is, for example, as shown
in FIG. 2, a bottomed hole (concave portion) 23 recessed from the surface 7 a may be formed in
the integrated circuit substrate 7.
[0037]
Further, although the shield portion 13 of the integrated circuit substrate 7 is formed inside the
integrated circuit substrate 7 by metal sputtering in the manufacturing process of the integrated
circuit substrate 7, the present invention is not limited to this. And may be formed at a position
overlapping in the thickness direction. That is, for example, the shield portion 13 may be formed
on the surface 7 a of the integrated circuit substrate 7 by patterning. The shield portion 13 may
be made of, for example, a metal plate or a metal mesh sheet. In the case of this configuration, a
metal plate or a mesh sheet may be attached to the front surface 7 a and the back surface 7 b of
the integrated circuit substrate 7. However, when the metal plate is disposed on the surface 7 a
of the integrated circuit substrate 7, it is preferable to form a hole in the metal plate so that the
diaphragm 9 a faces the through hole 11 or the hole of the integrated circuit substrate 7. .
[0038]
Next, a second embodiment according to the present invention will be described with reference
to FIG. As shown in FIG. 3, the semiconductor device 31 according to this embodiment includes a
resin portion (covering portion) 33 that integrally fixes the integrated circuit substrate 7 and the
semiconductor chip 9. The resin portion 33 is formed to cover the periphery of the integrated
circuit substrate 7 and the semiconductor chip 9 and the wires 21 and to be fixed to the surface
3 a of the mounting substrate 3. That is, the resin portion 33 also plays a role of integrally fixing
the semiconductor device 31 and the mounting substrate 3. The resin portion 33 is formed by
potting the molten resin around the integrated circuit substrate 7 and the semiconductor chip 9.
Since the diaphragm 9a of the semiconductor chip 9 needs to be communicated with the outer
space, it is preferable to cover the diaphragm 9a by masking so that the molten resin does not
touch the diaphragm 9a during potting.
[0039]
At the time of potting, preferably, the molten resin does not flow into the through holes 11 of the
integrated circuit substrate 7 from the gap between the surface 7 a of the integrated circuit
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substrate 7 and the opposing surface 9 b of the semiconductor chip 9. Specifically, for example,
as a resin used for potting, a material which does not enter the above-mentioned gap due to
surface tension may be selected. Further, for example, an annular bump (not shown) surrounding
the through hole 11 is formed so as to protrude from the surface 7 a of the integrated circuit
substrate 7 located around the through hole 11 and the opposing surface 9 b of the
semiconductor chip 9. The hollow portion S1 may be sealed from the outside by the bumps.
[0040]
According to the semiconductor device 31 described above, since the semiconductor chip 9 and
the integrated circuit substrate 7 are covered with the resin portion 33, the semiconductor chip 9
and the integrated circuit substrate 7 can be easily protected. That is, the semiconductor device
31 can be easily handled without touching the semiconductor chip 9 or the integrated circuit
substrate 7. Further, since the semiconductor chip 9 and the integrated circuit substrate 7 are
integrally fixed by the resin portion 33, the connection state between the semiconductor chip 9
and the integrated circuit substrate 7 can be reliably maintained.
[0041]
In the second embodiment described above, although the resin portion 33 fixes the
semiconductor device 31 and the mounting substrate 3 integrally, the present invention is not
limited to this, and at least the integrated circuit substrate 7 and the semiconductor chip 9
Should be fixed integrally. That is, the resin portion 33 may be formed before the semiconductor
device 31 is mounted on the mounting substrate 3.
[0042]
Next, a third embodiment according to the present invention will be described with reference to
FIG. As shown in FIG. 4, in the semiconductor device 41 according to this embodiment, a thin film
shield layer 43 having conductivity is provided on the surface 9c of the semiconductor chip 9
facing the same direction as the surface 7a of the integrated circuit substrate 7. It is formed. In
this configuration, the semiconductor chip 9 is sandwiched from the thickness direction of the
semiconductor chip 9 by the shield layer 43 and the shield portion 13 formed on the integrated
circuit substrate 7. The shield layer 43 is formed on the surface 9 c of the semiconductor chip 9
by metal sputtering in the manufacturing process of the semiconductor chip 9.
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[0043]
According to the semiconductor device 41 described above, even if the electromagnetic wave
generated on the outer side of the semiconductor device 41 tries to intrude from the surface 9 c
side of the semiconductor chip 9, the electromagnetic wave reaches the inside of the
semiconductor chip 9 in the shield layer 43. Can be prevented to prevent the semiconductor chip
9 from malfunctioning. In addition, since the semiconductor chip 9 is formed of silicon, the shield
layer 43 can be formed simultaneously with the manufacturing process of the semiconductor
chip 9.
[0044]
In the third embodiment described above, the shield layer 43 is formed by metal sputtering.
However, the present invention is not limited to this. For example, the shield layer 43 may be
formed of a metal plate or a metal mesh sheet. In this configuration, a metal plate or mesh sheet
may be attached to the surface 9 c of the semiconductor chip 9. However, when the metal plate is
disposed on the surface 9 c of the semiconductor chip 9, it is preferable to form a hole in the
metal plate so that the diaphragm 9 a is exposed outward.
[0045]
Next, a fourth embodiment according to the present invention will be described with reference to
FIG. As shown in FIG. 5, the semiconductor device 51 according to this embodiment is configured
by forming a plurality of through electrode portions 53 penetrating in the thickness direction
from the front surface 7a to the back surface 7b on the integrated circuit substrate 7. The
through electrode portion 53 has conductivity, and is electrically connected to the bump
electrode 19 of the semiconductor chip 9 through the pad 15 of the integrated circuit substrate
7 and a wiring portion (not shown). The through electrode portion 53 is exposed on the back
surface 7 b of the integrated circuit substrate 7 facing the front surface 3 a of the mounting
substrate 3, and the pad 57 formed on the front surface 3 a of the mounting substrate 3 via the
solder ball 55 is electrically Connected. The pads 57 of the mounting substrate 3 are formed in
the mounting region of the integrated circuit substrate 7 on the surface 3 a of the mounting
substrate 3. That is, the through electrode portion 53 formed inside the integrated circuit
substrate 7 plays a role of electrically connecting the mounting substrate 3 and the
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semiconductor chip 9 to each other.
[0046]
According to the semiconductor device 51 described above, since the through electrode portion
53 is exposed on the back surface 7 b of the integrated circuit substrate 7, the through electrode
portion 53 and the pad 57 of the mounting substrate 3 are electrically Since the mounting
substrate 3 and the integrated circuit substrate 7 can be simultaneously fixed only by the
connection, the mounting operation of the semiconductor device 51 on the mounting substrate 3
can be performed in a short time. Further, in the mounting region facing the integrated circuit
substrate 7 in the surface 3 a of the mounting substrate 3, electrical connection between the
mounting substrate 3 and the integrated circuit substrate 7 can be performed. That is, since it is
not necessary to use the wires 21 and the pads 5 (see FIGS. 1 to 4) shown in the first to third
embodiments, the substantial mounting area of the semiconductor device 51 on the mounting
substrate 3 can be further reduced. It becomes possible.
[0047]
In the fourth embodiment described above, although the through electrode unit 53 is electrically
connected to the bump electrode 19 of the semiconductor chip 9, the present invention is not
limited thereto. For example, the through electrode unit 53 is electrically connected to the shield
unit 13. It does not matter if it is done. In the case of this configuration, the shield portion 13 can
be easily dropped to the ground wiring of the mounting substrate 3, and the design freedom of
wiring extraction of the shield portion 13 can also be improved.
[0048]
Although the semiconductor devices of all the embodiments described above are configured by
forming an integrated circuit for operating the semiconductor chip 9 on the integrated circuit
substrate 7, in the case where the reduction of the mounting area of the integrated circuit
substrate 7 is not considered. Alternatively, as in the fifth embodiment shown in FIG. 6, the
integrated circuit may be separately formed of an electronic component 63, and the electronic
component 63 may be disposed on the surface 65a of the integrated circuit substrate 65. A
plurality of bump electrodes 69 similar to the semiconductor chip 9 are formed on the electronic
component 63, and each bump electrode 69 is electrically connected to a plurality of pads 71
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formed on the surface 65 a of the integrated circuit substrate 65. .
[0049]
In addition, the semiconductor device 61 according to the fifth embodiment is configured by
providing a covering lid 73 disposed on the surface 3 a of the mounting substrate 3 instead of
forming the resin portion 33 (see FIG. 2). The covering lid 73 is disposed to cover the integrated
circuit substrate 65, the semiconductor chip 9, and the electronic component 63. The covering
lid 73 is directed from the peripheral edge of the upper end wall portion 75 toward the front
surface 3 a of the mounting substrate 3 at a substantially plate-like upper end wall portion 75
disposed at a position separated in the thickness direction from the front surface 3 a of the
mounting substrate 3. And a substantially cylindrical opening 79 projecting from the upper end
wall 75 in a direction away from the surface 3 a of the mounting substrate 3. That is, the
covering lid 73 is formed in a substantially concave shape opened to the tip end side of the side
wall 77 by the upper end wall 75 and the side wall 77.
[0050]
Therefore, in the state where the tip of sidewall 77 is disposed on surface 3a of mounting
substrate 3, the hollow outer cavity S2 is defined by surface 3a of mounting substrate 3 and the
inner surfaces of upper end wall 75 and sidewall 77. Be done. In this state, the inner surfaces of
the upper end wall portion 75 and the side wall portion 77 are positioned so as not to touch the
semiconductor chip 9 or the wire 21 or the like disposed in the outer cavity portion S2. The
substantially cylindrical opening 79 serves to expose the outer cavity S2 to the outer space of the
semiconductor device 61, and the diaphragm 9a of the semiconductor chip 9 is exposed outward
through the outer cavity S2 and the opening 79. It will be arrange ¦ positioned in the position
connected to space. In the illustrated example, although the diaphragm 9a itself is exposed to the
outward space from the opening 79, for example, the opening 79 may be slipped so that the
diaphragm 9a is not directly exposed to the outward space. Good.
[0051]
Further, a resin mold portion 81 is formed on the outside of the covering lid 73, and the covering
lid 73 and the mounting substrate 3 are integrally fixed by the resin mold portion 81. A covering
portion 83 covering the integrated circuit substrate 65 and the semiconductor chip 9 is
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configured by the covering lid 73 and the resin mold portion 81 so as to communicate the
diaphragm 9a to the outer space.
[0052]
According to the semiconductor device 61 described above, since the integrated circuit board 65
and the semiconductor chip 9 are covered by the covering lid 73 and the resin mold portion 81,
the semiconductor chip 9 and the integrated circuit board 65 can be easily protected. . That is,
the semiconductor device 31 can be easily handled without touching the semiconductor chip 9 or
the integrated circuit substrate 65.
[0053]
In the fifth embodiment, the mounting substrate 3 and the cover lid 73 are integrally fixed by the
resin mold portion 81. However, the present invention is not limited to this. For example, the side
wall of the cover lid 73 The distal ends of the portions 77 may be fixed to the surface 3 a of the
mounting substrate 3 so as to be fixed to each other. In this case, the covering portion covering
only the integrated circuit board 65 and the semiconductor chip 9 is constituted by the covering
lid 73 alone.
[0054]
In all of the above-described embodiments, the semiconductor chip 9 and the integrated circuit
boards 7 and 65 are electrically connected by the bump electrodes 19 protruding from the facing
surface 9 b of the semiconductor chip 9. Instead, at least the facing surface 9 b of the
semiconductor chip 9 and the surfaces 7 a and 65 a of the integrated circuit substrates 7 and 65
may be electrically connected. That is, for example, a similar bump electrode protruding from the
surface 7a, 65a may be formed on the integrated circuit substrate 7, 65, and a pad to be bonded
to the bump electrode may be formed on the opposing surface 9b of the semiconductor chip 9. .
[0055]
In addition, although the semiconductor chip 9 and the integrated circuit substrates 7 and 65 are
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electrically connected using the bump electrode 19, the present invention is not limited to this,
and for example, they may be electrically connected to each other by wire bonding. . In the case
of this configuration, they may be fixed to each other between the facing surface 9b of the
semiconductor chip 9 and the surfaces 7a and 65a of the integrated circuit boards 7 and 65 via
an adhesive such as silver paste. Furthermore, although the semiconductor chip 9 is electrically
connected to the mounting substrate 3 through the wiring portion of the integrated circuit
substrates 7 and 65, the present invention is not limited to this. For example, the semiconductor
chip 9 and the mounting substrate 3 are wire bonded or the like. It may be direct electrical
connection.
[0056]
Although the mounting substrate 3 is formed of a multilayer wiring substrate, the present
invention is not limited thereto. For example, the mounting substrate 3 may be a so-called lead
frame in which a stage portion and a plurality of leads disposed around the stage portion are
formed on a thin metal plate. . In this case, the integrated circuit substrates 7 and 65 may be
fixed to the surface of the stage portion, and the pads 17 of the integrated circuit substrates 7
and 65 may be electrically connected to the aforementioned leads by wire bonding or the like.
[0057]
Furthermore, although the semiconductor chip 9 is a sound pressure sensor chip provided with
the diaphragm 9a, the present invention is not limited to this, as long as at least a movable
portion such as the diaphragm 9a constituting the semiconductor chip 9 is included. Therefore,
the semiconductor chip may be, for example, a pressure sensor chip that measures the pressure
in the external space of the semiconductor device 1 or a change in pressure.
[0058]
The embodiment of the present invention has been described in detail with reference to the
drawings, but the specific configuration is not limited to this embodiment, and design changes
and the like within the scope of the present invention are also included.
[0059]
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FIG. 1 is a side sectional view showing a state in which a semiconductor device according to a
first embodiment of the present invention is mounted on a mounting substrate.
It is a sectional side view which shows the state which mounted the semiconductor device
concerning other embodiment of this invention on a mounting substrate. It is a sectional side
view which shows the state which mounted the semiconductor device concerning the 2nd
Embodiment of this invention on a mounting substrate. It is a sectional side view which shows
the state which mounted the semiconductor device concerning 3rd Embodiment of this invention
on a mounting substrate. It is a sectional side view which shows the state which mounted the
semiconductor device concerning the 4th Embodiment of this invention on a mounting substrate.
It is a sectional side view which shows the state which mounted the semiconductor device
concerning the 5th Embodiment of this invention on a mounting substrate.
Explanation of sign
[0060]
1, 31, 41, 51, 61: semiconductor device, 7, 65: integrated circuit substrate, 7a, 65a: front surface,
7b: back surface, 9: semiconductor chip, 9a, ... Diaphragm, 9b: facing surface, 9c: surface, 11:
through hole (recessed portion), 13: shield portion, 23: hole (recessed portion), 33: resin portion
(covering portion , 43 ... shield layer, 53 ... through electrode portion, 73 ... covering lid, 83 ...
covering portion
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